Hiroaki IUCHI

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical thin film transistors in non-volatile storage systems
- Patent number 9,818,798
- Issue date Nov 14, 2017
- SanDisk Technologies LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiheight contact via structures for a multilevel interconnect st...
- Patent number 9,691,778
- Issue date Jun 27, 2017
- SanDisk Technologies LLC
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Blocking oxide in memory opening integration scheme for three-dimen...
- Patent number 9,601,508
- Issue date Mar 21, 2017
- SanDisk Technologies LLC
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiheight contact via structures for a multilevel interconnect st...
- Patent number 9,401,309
- Issue date Jul 26, 2016
- SanDisk Technologies LLC
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin film transistors in non-volatile storage systems
- Patent number 9,362,338
- Issue date Jun 7, 2016
- SanDisk Technologies Inc.
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile storage having oxide/nitride sidewall
- Patent number 9,281,314
- Issue date Mar 8, 2016
- SanDisk Technologies Inc.
- Takashi Kashimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiheight electrically conductive via contacts for a multilevel i...
- Patent number 9,236,392
- Issue date Jan 12, 2016
- SanDisk Technologies Inc.
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap isolation in non-volatile memory using sacrificial films
- Patent number 9,123,577
- Issue date Sep 1, 2015
- SanDisk Technologies Inc.
- Hitomi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming crack free gap fill
- Patent number 8,937,011
- Issue date Jan 20, 2015
- Sandisk 3D LLC
- Hiroaki Iuchi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of inhibiting wire collapse
- Patent number 8,802,561
- Issue date Aug 12, 2014
- Sandisk 3D LLC
- Chao Feng Yeh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICIRCULAR VERTICAL NAND STRING WITH RECESSED INACTIVE SEMICON...
- Publication number 20170148805
- Publication date May 25, 2017
- SANDISK TECHNOLOGIES INC.
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...
- Publication number 20160315095
- Publication date Oct 27, 2016
- SANDISK TECHNOLOGIES INC.
- Jongsun Sel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...
- Publication number 20160307912
- Publication date Oct 20, 2016
- SanDisk Technologies LLC
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Thin Film Transistors In Non-Volatile Storage Systems
- Publication number 20160284765
- Publication date Sep 29, 2016
- SanDisk Technologies LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SET OF STEPPED SURFACES FORMATION FOR A MULTILEVEL INTERCONNECT STR...
- Publication number 20160148835
- Publication date May 26, 2016
- SanDisk Technologies, Inc.
- Seiji SHIMABUKURO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...
- Publication number 20160064281
- Publication date Mar 3, 2016
- SANDISK TECHNOLOGIES INC.
- Keisuke Izumi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Thin Film Transistors In Non-Volatile Storage Systems
- Publication number 20150249112
- Publication date Sep 3, 2015
- SanDisk 3D LLC
- Naoki Takeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CRACK FREE GAP FILL
- Publication number 20140170847
- Publication date Jun 19, 2014
- SanDisk 3D LLC
- Hiroaki Iuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air Gap Isolation In Non-Volatile Memory Using Sacrificial Films
- Publication number 20140159135
- Publication date Jun 12, 2014
- SANDISK TECHNOLOGIES INC.
- Hitomi Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Air Gap Isolation In Non-Volatile Memory
- Publication number 20130307044
- Publication date Nov 21, 2013
- Hiroyuki Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS

Hiroaki IUCHI

Person

Patents Grantslast 30 patents

Vertical thin film transistors in non-volatile storage systems

Multiheight contact via structures for a multilevel interconnect st...

Blocking oxide in memory opening integration scheme for three-dimen...

Multiheight contact via structures for a multilevel interconnect st...

Vertical thin film transistors in non-volatile storage systems

Non-volatile storage having oxide/nitride sidewall

Multiheight electrically conductive via contacts for a multilevel i...

Air gap isolation in non-volatile memory using sacrificial films

Method of forming crack free gap fill

Method of inhibiting wire collapse

Patents Applicationslast 30 patents

3D SEMICIRCULAR VERTICAL NAND STRING WITH RECESSED INACTIVE SEMICON...

BLOCKING OXIDE IN MEMORY OPENING INTEGRATION SCHEME FOR THREE-DIMEN...

MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...

Vertical Thin Film Transistors In Non-Volatile Storage Systems

SET OF STEPPED SURFACES FORMATION FOR A MULTILEVEL INTERCONNECT STR...

MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT ST...

Vertical Thin Film Transistors In Non-Volatile Storage Systems

METHOD OF FORMING CRACK FREE GAP FILL

Air Gap Isolation In Non-Volatile Memory Using Sacrificial Films

Selective Air Gap Isolation In Non-Volatile Memory