Hiroaki Niimi

Person

Cohoes, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 11,562,906
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal wrap-around contacts for semiconductor devices
- Patent number 11,374,101
- Issue date Jun 28, 2022
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional logic de...
- Patent number 11,264,274
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust low-k bottom spacer for VFET
- Patent number 11,201,089
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal contacts with ruthenium metal plugs for semiconductor de...
- Patent number 11,171,060
- Issue date Nov 9, 2021
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility transistors
- Patent number 10,978,353
- Issue date Apr 13, 2021
- Texas Instruments Incorporated
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having straight bottom spacers
- Patent number 10,943,992
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for CMOS integrated circuits
- Patent number 10,879,133
- Issue date Dec 29, 2020
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Titanium silicide formation in a narrow source-drain contact
- Patent number 10,854,510
- Issue date Dec 1, 2020
- GLOBALFOUNDRIES Inc.
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal-insulator-semiconductor contact structure and formulatio...
- Patent number 10,833,019
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid source and drain contact formation using metal liner and met...
- Patent number 10,818,599
- Issue date Oct 27, 2020
- International Business Machines Corporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation through low-tempearature epitaxial deposition in...
- Patent number 10,804,270
- Issue date Oct 13, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation through low-temperature epitaxial deposition in s...
- Patent number 10,692,868
- Issue date Jun 23, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation in semiconductor devices
- Patent number 10,685,961
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area and Schottky barrier height engineering for contact tr...
- Patent number 10,643,894
- Issue date May 5, 2020
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area and Schottky barrier height engineering for contact tr...
- Patent number 10,643,893
- Issue date May 5, 2020
- International Business Machines Corporation
- Jody Fronheiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation in semiconductor devices
- Patent number 10,586,769
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal-insulator-semiconductor contact structure and formulatio...
- Patent number 10,535,606
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS VFET contacts with trench solid and liquid phase epitaxy
- Patent number 10,510,617
- Issue date Dec 17, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming merged source/drain regions on integrated circui...
- Patent number 10,475,904
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to enhance effective work function of mid-gap metal by inco...
- Patent number 10,439,040
- Issue date Oct 8, 2019
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitance reduction for replacement gate CMOS
- Patent number 10,439,041
- Issue date Oct 8, 2019
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source drain contact formation
- Patent number 10,381,442
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation in semiconductor devices
- Patent number 10,347,581
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation in semiconductor devices
- Patent number 10,319,722
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source drain contact formation with trench metastabl...
- Patent number 10,249,502
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel field-effect transistor (FET) process compatible l...
- Patent number 10,243,073
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for forming wrap-around contact with...
- Patent number 10,236,218
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary FETs with wrap around contacts and methods of forming...
- Patent number 10,236,292
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid source and drain contact formation using metal liner and met...
- Patent number 10,211,094
- Issue date Feb 19, 2019
- International Business Machines Corporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE DEPOSITION OF LINER AND BARRIER FILMS FOR RESISTANCE REDU...
- Publication number 20240047342
- Publication date Feb 8, 2024
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION
- Publication number 20230274932
- Publication date Aug 31, 2023
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Superlattice Structures and Methods of Forming the Same
- Publication number 20230051311
- Publication date Feb 16, 2023
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FINFET STRUCTURE
- Publication number 20220344162
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20220310812
- Publication date Sep 29, 2022
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SILICIDE WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20220109066
- Publication date Apr 7, 2022
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF LOW-TEMPERATURE AND HIGH-TEMPERATURE IN-SITU DOPED SOU...
- Publication number 20220051905
- Publication date Feb 17, 2022
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY TRANSISTORS
- Publication number 20210225711
- Publication date Jul 22, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...
- Publication number 20210098306
- Publication date Apr 1, 2021
- TOKYO ELECTRON LIMITED
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS
- Publication number 20200357894
- Publication date Nov 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SILICIDE WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20200279943
- Publication date Sep 3, 2020
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL CONTACTS WITH RUTHENIUM METAL PLUGS FOR SEMICONDUCTOR DE...
- Publication number 20200279782
- Publication date Sep 3, 2020
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20200279942
- Publication date Sep 3, 2020
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL-INSULATOR-SEMICONDUCTOR CONTACT STRUCTURE AND FORMULATIO...
- Publication number 20200066638
- Publication date Feb 27, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS VFET CONTACTS WITH TRENCH SOLID AND LIQUID PHASE EPITAXY
- Publication number 20190279913
- Publication date Sep 12, 2019
- International Business Machines Corporation
- Oleg GLUSCHENKOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION IN SEMICONDUCTOR DEVICES
- Publication number 20190221565
- Publication date Jul 18, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MERGED SOURCE/DRAIN REGIONS ON INTEGRATED CIRCUI...
- Publication number 20190214484
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance Source Drain Contact Formation with Trench Metastabl...
- Publication number 20190181012
- Publication date Jun 13, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SOURCE AND DRAIN CONTACT FORMATION USING METAL LINER AND MET...
- Publication number 20190157413
- Publication date May 23, 2019
- International Business Machines Corporation
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION IN SEMICONDUCTOR DEVICES
- Publication number 20190148299
- Publication date May 16, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION THROUGH LOW-TEMPEARATURE EPITAXIAL DEPOSITION IN...
- Publication number 20190148377
- Publication date May 16, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION THROUGH LOW-TEMPEARATURE EPITAXIAL DEPOSITION IN...
- Publication number 20190115347
- Publication date Apr 18, 2019
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH MOBILITY TRANSISTORS
- Publication number 20190103321
- Publication date Apr 4, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Manoj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL-INSULATOR-SEMICONDUCTOR CONTACT STRUCTURE AND FORMULATIO...
- Publication number 20180331040
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION IN SEMICONDUCTOR DEVICES
- Publication number 20180277483
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION IN SEMICONDUCTOR DEVICES
- Publication number 20180277541
- Publication date Sep 27, 2018
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Resistance Source Drain Contact Formation
- Publication number 20180240875
- Publication date Aug 23, 2018
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS
- Publication number 20180226505
- Publication date Aug 9, 2018
- GLOBALFOUNDRIES INC.
- Jiseok KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A CONTACT FOR A SEMICONDUCTOR DEVICE
- Publication number 20180114861
- Publication date Apr 26, 2018
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS

Hiroaki Niimi

Person

Patents Grantslast 30 patents

Low resistance source drain contact formation with trench metastabl...

Dual metal wrap-around contacts for semiconductor devices

Reverse contact and silicide process for three-dimensional logic de...

Robust low-k bottom spacer for VFET

Dual metal contacts with ruthenium metal plugs for semiconductor de...

High mobility transistors

Transistor having straight bottom spacers

Replacement metal gate process for CMOS integrated circuits

Titanium silicide formation in a narrow source-drain contact

Dual metal-insulator-semiconductor contact structure and formulatio...

Hybrid source and drain contact formation using metal liner and met...

Contact formation through low-tempearature epitaxial deposition in...

Contact formation through low-temperature epitaxial deposition in s...

Contact formation in semiconductor devices

Surface area and Schottky barrier height engineering for contact tr...

Surface area and Schottky barrier height engineering for contact tr...

Contact formation in semiconductor devices

Dual metal-insulator-semiconductor contact structure and formulatio...

CMOS VFET contacts with trench solid and liquid phase epitaxy

Methods of forming merged source/drain regions on integrated circui...

Methods to enhance effective work function of mid-gap metal by inco...

Fringe capacitance reduction for replacement gate CMOS

Low resistance source drain contact formation

Contact formation in semiconductor devices

Contact formation in semiconductor devices

Low resistance source drain contact formation with trench metastabl...

Vertical channel field-effect transistor (FET) process compatible l...

Methods, apparatus and system for forming wrap-around contact with...

Complementary FETs with wrap around contacts and methods of forming...

Hybrid source and drain contact formation using metal liner and met...

Patents Applicationslast 30 patents

SELECTIVE DEPOSITION OF LINER AND BARRIER FILMS FOR RESISTANCE REDU...

SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION

Conductive Superlattice Structures and Methods of Forming the Same

METHOD OF FORMING A FINFET STRUCTURE

DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

DUAL SILICIDE WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

FORMATION OF LOW-TEMPERATURE AND HIGH-TEMPERATURE IN-SITU DOPED SOU...

HIGH MOBILITY TRANSISTORS

REVERSE CONTACT AND SILICIDE PROCESS FOR THREE-DIMENSIONAL LOGIC DE...

TRANSISTOR HAVING STRAIGHT BOTTOM SPACERS

DUAL SILICIDE WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

DUAL METAL CONTACTS WITH RUTHENIUM METAL PLUGS FOR SEMICONDUCTOR DE...

DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

DUAL METAL-INSULATOR-SEMICONDUCTOR CONTACT STRUCTURE AND FORMULATIO...

CMOS VFET CONTACTS WITH TRENCH SOLID AND LIQUID PHASE EPITAXY

CONTACT FORMATION IN SEMICONDUCTOR DEVICES

METHODS OF FORMING MERGED SOURCE/DRAIN REGIONS ON INTEGRATED CIRCUI...

Low Resistance Source Drain Contact Formation with Trench Metastabl...

HYBRID SOURCE AND DRAIN CONTACT FORMATION USING METAL LINER AND MET...

CONTACT FORMATION IN SEMICONDUCTOR DEVICES

CONTACT FORMATION THROUGH LOW-TEMPEARATURE EPITAXIAL DEPOSITION IN...

CONTACT FORMATION THROUGH LOW-TEMPEARATURE EPITAXIAL DEPOSITION IN...

HIGH MOBILITY TRANSISTORS

DUAL METAL-INSULATOR-SEMICONDUCTOR CONTACT STRUCTURE AND FORMULATIO...

CONTACT FORMATION IN SEMICONDUCTOR DEVICES

CONTACT FORMATION IN SEMICONDUCTOR DEVICES

Low Resistance Source Drain Contact Formation

VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS

FORMING A CONTACT FOR A SEMICONDUCTOR DEVICE