Hiroaki SUKEGAWA

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect element containing two non-magnetic layers...
- Patent number 11,585,873
- Issue date Feb 21, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Precursor structure of perpendicularly magnetized film, perpendicul...
- Patent number 11,374,168
- Issue date Jun 28, 2022
- National Institute for Materials Science
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction, magnetoresistive element and spintronics...
- Patent number 11,105,867
- Issue date Aug 31, 2021
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction, spintronics device using same, and method...
- Patent number 11,107,976
- Issue date Aug 31, 2021
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Underlayer for perpendicularly magnetized film, perpendicularly mag...
- Patent number 10,832,719
- Issue date Nov 10, 2020
- National Institute for Materials Science
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline magneto resistance element, method for producing th...
- Patent number 10,749,105
- Issue date Aug 18, 2020
- National Institute for Materials Science
- Jiamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and method for manufacturing the same
- Patent number 10,665,776
- Issue date May 26, 2020
- TDK Corporation
- Shinto Ichikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic layer and magnetic device including the same
- Patent number 10,395,809
- Issue date Aug 27, 2019
- Samsung Electronics Co., Ltd.
- Shigeki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 10,305,027
- Issue date May 28, 2019
- Kabushiki Kaisha Toshiba
- Yushi Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monocrystalline magneto resistance element, method for producing th...
- Patent number 10,205,091
- Issue date Feb 12, 2019
- National Institute for Materials Science
- Jiamin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Underlayer for perpendicularly magnetized film, perpendicularly mag...
- Patent number 10,199,063
- Issue date Feb 5, 2019
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular magnetization film, perpendicular magnetization film...
- Patent number 9,842,636
- Issue date Dec 12, 2017
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic tunnel junction structure and magnetoresistive effect...
- Patent number 8,872,291
- Issue date Oct 28, 2014
- National Institute for Materials Science
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferromagnetic tunnel junction structure and magnetoresistive elemen...
- Patent number 8,866,243
- Issue date Oct 21, 2014
- National Institute for Materials Science
- Koichiro Inomata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferromagnetic tunnel junction structure, and magneto-resistive elem...
- Patent number 8,575,674
- Issue date Nov 5, 2013
- National Institute for Materials Science
- Hiroaki Sukegawa
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...
- Publication number 20230009284
- Publication date Jan 12, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION, MAGNETORESISTIVE ELEMENT AND SPINTRONICS...
- Publication number 20210123991
- Publication date Apr 29, 2021
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
PRECURSOR STRUCTURE OF PERPENDICULARLY MAGNETIZED FILM, PERPENDICUL...
- Publication number 20200357985
- Publication date Nov 12, 2020
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC TUNNEL JUNCTION, SPINTRONICS DEVICE USING SAME, AND METHO...
- Publication number 20200044144
- Publication date Feb 6, 2020
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190259937
- Publication date Aug 22, 2019
- TDK Corporation
- Shinto ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...
- Publication number 20190172486
- Publication date Jun 6, 2019
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MONOCRYSTALLINE MAGNETO RESISTANCE ELEMENT, METHOD FOR PRODUCING TH...
- Publication number 20180226573
- Publication date Aug 9, 2018
- national institute for materials science
- Jiamin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20180090671
- Publication date Mar 29, 2018
- KABUSHIKI KAISHA TOSHIBA
- Yushi KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME
- Publication number 20170330668
- Publication date Nov 16, 2017
- Shigeki TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOCRYSTALLINE MAGNETO RESISTANCE ELEMENT, METHOD FOR PRODUCING TH...
- Publication number 20170229643
- Publication date Aug 10, 2017
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Jiamin CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...
- Publication number 20170140784
- Publication date May 18, 2017
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...
- Publication number 20160314825
- Publication date Oct 27, 2016
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki SUKEGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect...
- Publication number 20130221461
- Publication date Aug 29, 2013
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Hiroaki Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMEN...
- Publication number 20120112299
- Publication date May 10, 2012
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEM...
- Publication number 20120091548
- Publication date Apr 19, 2012
- Hiroaki Sukegawa
- G01 - MEASURING TESTING

Hiroaki SUKEGAWA

Person

Patents Grantslast 30 patents

Magnetoresistive effect element containing two non-magnetic layers...

Precursor structure of perpendicularly magnetized film, perpendicul...

Magnetic tunnel junction, magnetoresistive element and spintronics...

Magnetic tunnel junction, spintronics device using same, and method...

Underlayer for perpendicularly magnetized film, perpendicularly mag...

Monocrystalline magneto resistance element, method for producing th...

Magnetoresistance effect element and method for manufacturing the same

Perpendicular magnetic layer and magnetic device including the same

Magnetoresistive element and magnetic memory device

Monocrystalline magneto resistance element, method for producing th...

Underlayer for perpendicularly magnetized film, perpendicularly mag...

Perpendicular magnetization film, perpendicular magnetization film...

Ferromagnetic tunnel junction structure and magnetoresistive effect...

Ferromagnetic tunnel junction structure and magnetoresistive elemen...

Ferromagnetic tunnel junction structure, and magneto-resistive elem...

Patents Applicationslast 30 patents

MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...

MAGNETIC TUNNEL JUNCTION, MAGNETORESISTIVE ELEMENT AND SPINTRONICS...

PRECURSOR STRUCTURE OF PERPENDICULARLY MAGNETIZED FILM, PERPENDICUL...

MAGNETIC TUNNEL JUNCTION, SPINTRONICS DEVICE USING SAME, AND METHO...

MAGNETORESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...

MONOCRYSTALLINE MAGNETO RESISTANCE ELEMENT, METHOD FOR PRODUCING TH...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

PERPENDICULAR MAGNETIC LAYER AND MAGNETIC DEVICE INCLUDING THE SAME

MONOCRYSTALLINE MAGNETO RESISTANCE ELEMENT, METHOD FOR PRODUCING TH...

UNDERLAYER FOR PERPENDICULARLY MAGNETIZED FILM, PERPENDICULARLY MAG...

PERPENDICULAR MAGNETIZATION FILM, PERPENDICULAR MAGNETIZATION FILM...

Ferromagnetic Tunnel Junction Structure and Magnetoresistive Effect...

FERROMAGNETIC TUNNEL JUNCTION STRUCTURE AND MAGNETORESISTIVE ELEMEN...

FERROMAGNETIC TUNNEL JUNCTION STRUCTURE, AND MAGNETO-RESISTIVE ELEM...