HIROFUMI INOUE

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FISHKILL, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Self-aligned trench capacitor capping process for high density DRAM...
- Patent number 6,372,573
- Issue date Apr 16, 2002
- Kabushiki Kaisha Toshiba
- Masami Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrical isolation for semiconductor devices
- Patent number 6,074,903
- Issue date Jun 13, 2000
- Siemens Aktiengesellschaft
- Rajesh Rengarajan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELF-ALIGNED TRENCH CAPACITOR CAPPING PROCESS FOR HIGH DENSITY DRAM...
- Publication number 20010039088
- Publication date Nov 8, 2001
- MASAMI AOKI
- H01 - BASIC ELECTRIC ELEMENTS