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Hirofumi Uenoyama
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Anjo, JP
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last 30 patents
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Patent Grant
Semiconductor sensor having multi-layer movable beam structure film
Patent number
5,936,159
Issue date
Aug 10, 1999
Nippondenso Co., Ltd.
Kazuhiko Kano
G01 - MEASURING TESTING
Information
Patent Grant
Method for fabricating a semiconductor acceleration sensor
Patent number
5,851,851
Issue date
Dec 22, 1998
Nippondenso Co., Ltd.
Hirofumi Uenoyama
G01 - MEASURING TESTING
Information
Patent Grant
Semiconductor acceleration sensor with source and drain regions
Patent number
5,627,397
Issue date
May 6, 1997
Nippondenso Co., Ltd.
Kazuhiko Kano
G01 - MEASURING TESTING
Information
Patent Grant
Manufacturing method for magnetoresistance elements
Patent number
5,618,738
Issue date
Apr 8, 1997
Nippondenso Co., Ltd.
Kenichi Ao
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Semiconductor acceleration sensor with beam structure
Patent number
5,619,050
Issue date
Apr 8, 1997
Nippondenso Co., Ltd.
Hirofumi Uenoyama
G01 - MEASURING TESTING
Information
Patent Grant
Semiconductor sensor method
Patent number
5,587,343
Issue date
Dec 24, 1996
Nippondenso Co., Ltd.
Kazuhiko Kano
G01 - MEASURING TESTING
Information
Patent Grant
Method for manufacturing an electromagnetic conversion device and a...
Patent number
5,551,586
Issue date
Sep 3, 1996
Nippondenso Co., Ltd.
Hirofumi Uenoyama
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Magnetoresistive element and manufacturing method therefor
Patent number
5,471,084
Issue date
Nov 28, 1995
Nippondenso Co., Ltd.
Yasutoshi Suzuki
H01 - BASIC ELECTRIC ELEMENTS