Hirohisa Kawasaki

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of making fins and fin field effect transistors (FinFETs)
- Patent number 8,859,389
- Issue date Oct 14, 2014
- Kabushiki Kaisha Toshiba
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted EPI shape and half-wrap around silicide in S/D merged FinFET
- Patent number 8,362,574
- Issue date Jan 29, 2013
- Kabushiki Kaisha Toshiba
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,134,209
- Issue date Mar 13, 2012
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing methods with using non-plana...
- Patent number 8,116,121
- Issue date Feb 14, 2012
- Kabushiki Kaisha Toshiba
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Publication number 20120193751
- Publication date Aug 2, 2012
- Toshiba America Electronic Components, Inc
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS WITH USING NON-PLANA...
- Publication number 20120108016
- Publication date May 3, 2012
- Kabushiki Kaisha Toshiba
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED EPI SHAPE AND HALF-WRAP AROUND SILICIDE IN S/D MERGED FINFET
- Publication number 20110298058
- Publication date Dec 8, 2011
- Toshiba America Electronic Components, Inc
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS
- Publication number 20110260282
- Publication date Oct 27, 2011
- Toshiba America Electronic Components, Inc
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110147839
- Publication date Jun 23, 2011
- Toshiba America Electronic Components, Inc
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS WITH USING NON-PLANA...
- Publication number 20100224943
- Publication date Sep 9, 2010
- Toshiba America Electronic Components, Inc
- Hirohisa Kawasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA CURING OF PATTERNING MATERIALS FOR AGGRESSIVELY SCALED FEATURES
- Publication number 20090174036
- Publication date Jul 9, 2009
- International Business Machines Corporation
- Nicholas C. Fuller
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Hirohisa Kawasaki

Person

Patents Grantslast 30 patents

Methods of making fins and fin field effect transistors (FinFETs)

Faceted EPI shape and half-wrap around silicide in S/D merged FinFET

Semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing methods with using non-plana...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS WITH USING NON-PLANA...

FACETED EPI SHAPE AND HALF-WRAP AROUND SILICIDE IN S/D MERGED FINFET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHODS WITH USING NON-PLANA...

PLASMA CURING OF PATTERNING MATERIALS FOR AGGRESSIVELY SCALED FEATURES