Hirohito Watanabe

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile semiconductor storage unit and production method therefor
- Patent number 7,880,215
- Issue date Feb 1, 2011
- NEC Corporation
- Hirohito Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,838,945
- Issue date Nov 23, 2010
- NEC Corporation
- Motofumi Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high dielectric constant layers of diff...
- Patent number 7,759,744
- Issue date Jul 20, 2010
- NEC Electronics Corporation
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, production method and production device thereof
- Patent number 7,679,148
- Issue date Mar 16, 2010
- NEC Corporation
- Heiji Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,238,996
- Issue date Jul 3, 2007
- NEC Electronics Corporation
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory utilizing polarization of ferroele...
- Patent number 6,515,322
- Issue date Feb 4, 2003
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing thin film capacitor
- Patent number 6,225,133
- Issue date May 1, 2001
- NEC Corporation
- Shintaro Yamamichi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a capacitor incorporated in a semiconductor device
- Patent number 6,146,966
- Issue date Nov 14, 2000
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a semiconductor device having hemispherical g...
- Patent number 6,140,204
- Issue date Oct 31, 2000
- NEC Corporation
- Hirohito Watanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a semiconductor memory device with a stacke...
- Patent number 6,054,360
- Issue date Apr 25, 2000
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of selectively producing refractory metal silicide uniform...
- Patent number 6,033,978
- Issue date Mar 7, 2000
- NEC Corporation
- Kunihiro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor selective etching method and apparatus
- Patent number 6,024,888
- Issue date Feb 15, 2000
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor having a corrugated electrode
- Patent number 6,022,772
- Issue date Feb 8, 2000
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon layer having surface controlled to be u...
- Patent number 5,989,969
- Issue date Nov 23, 1999
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and manufacturing method of...
- Patent number 5,973,355
- Issue date Oct 26, 1999
- NEC Corporation
- Hiroki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and manufacturing method of...
- Patent number 5,972,750
- Issue date Oct 26, 1999
- NEC Corporation
- Hiroki Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor incorporated in semiconductor device having a lower elect...
- Patent number 5,959,326
- Issue date Sep 28, 1999
- NEC Corporation
- Fumiki Aiso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon layer having surface controlled to be u...
- Patent number 5,910,019
- Issue date Jun 8, 1999
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for capturing gaseous impurities and semiconductor device ma...
- Patent number 5,863,602
- Issue date Jan 26, 1999
- NEC Corporation
- Hirohito Watanabe
- B08 - CLEANING
Information Patent Grant
Method of manufacturing a semiconductor device wherein one of capac...
- Patent number 5,837,594
- Issue date Nov 17, 1998
- NEC Corporation
- Ichiroh Honma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor having a corrugated electrode
- Patent number 5,835,337
- Issue date Nov 10, 1998
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device wherein one of capacitor electrodes comprises...
- Patent number 5,753,949
- Issue date May 19, 1998
- NEC Corporation
- Ichiroh Honma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating polycrystalline silicon having micro roughne...
- Patent number 5,723,379
- Issue date Mar 3, 1998
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating polycrystalline silicon having micro roughne...
- Patent number 5,691,249
- Issue date Nov 25, 1997
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device having low-resistance ga...
- Patent number 5,661,052
- Issue date Aug 26, 1997
- NEC Corporation
- Ken Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HF vapor selective etching method and apparatus
- Patent number 5,658,417
- Issue date Aug 19, 1997
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having polycrystalline silicon layer with unev...
- Patent number 5,623,243
- Issue date Apr 22, 1997
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device with insulating film havin...
- Patent number 5,397,748
- Issue date Mar 14, 1995
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor integrated circuit device having a...
- Patent number 5,372,962
- Issue date Dec 13, 1994
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating polycrystalline silicon having micro roughne...
- Patent number 5,366,917
- Issue date Nov 22, 1994
- NEC Corporation
- Hirohito Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20090096032
- Publication date Apr 16, 2009
- NEC Corporation
- Motofumi Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and production method therefor
- Publication number 20080203500
- Publication date Aug 28, 2008
- NEC Corporation
- Takashi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Semiconductor Storage Unit and Production Method Therefor
- Publication number 20080144377
- Publication date Jun 19, 2008
- Hirohito Watanabe
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and production method therefor
- Publication number 20060131670
- Publication date Jun 22, 2006
- Takashi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050263802
- Publication date Dec 1, 2005
- NEC ELECTRONICS CORPORATION
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050253181
- Publication date Nov 17, 2005
- NEC ELECTRONICS CORPORATION
- Naohiko Kimizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, production method and production device thereof
- Publication number 20050233526
- Publication date Oct 20, 2005
- Heiji Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Hirohito Watanabe

Person

Patents Grantslast 30 patents

Nonvolatile semiconductor storage unit and production method therefor

Semiconductor device and manufacturing method thereof

Semiconductor device having high dielectric constant layers of diff...

Semiconductor device, production method and production device thereof

Semiconductor device

Nonvolatile semiconductor memory utilizing polarization of ferroele...

Method of manufacturing thin film capacitor

Process for forming a capacitor incorporated in a semiconductor device

Process for producing a semiconductor device having hemispherical g...

Method of manufacturing a semiconductor memory device with a stacke...

Process of selectively producing refractory metal silicide uniform...

Vapor selective etching method and apparatus

Stacked capacitor having a corrugated electrode

Method of producing silicon layer having surface controlled to be u...

Nonvolatile semiconductor memory device and manufacturing method of...

Nonvolatile semiconductor memory device and manufacturing method of...

Capacitor incorporated in semiconductor device having a lower elect...

Method of producing silicon layer having surface controlled to be u...

Method for capturing gaseous impurities and semiconductor device ma...

Method of manufacturing a semiconductor device wherein one of capac...

Stacked capacitor having a corrugated electrode

Semiconductor device wherein one of capacitor electrodes comprises...

Method for fabricating polycrystalline silicon having micro roughne...

Method for fabricating polycrystalline silicon having micro roughne...

Method of fabricating semiconductor device having low-resistance ga...

HF vapor selective etching method and apparatus

Semiconductor device having polycrystalline silicon layer with unev...

Method of producing semiconductor device with insulating film havin...

Method of making a semiconductor integrated circuit device having a...

Method for fabricating polycrystalline silicon having micro roughne...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor device and production method therefor

Nonvolatile Semiconductor Storage Unit and Production Method Therefor

Semiconductor device and production method therefor

Semiconductor device

Semiconductor device

Semiconductor device, production method and production device thereof