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Hirokatsu Yashiro
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Kawasaki, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Low resistivity single crystal silicon carbide wafer
Patent number
9,915,011
Issue date
Mar 13, 2018
Nippon Steel & Sumitomo Metal Corporation
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
Patent number
9,691,607
Issue date
Jun 27, 2017
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Production process of epitaxial silicon carbide single crystal subs...
Patent number
8,927,396
Issue date
Jan 6, 2015
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
Patent number
8,901,570
Issue date
Dec 2, 2014
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Saw wire
Patent number
8,707,944
Issue date
Apr 29, 2014
Nippon Steel & Sumitomo Metal Corporation
Mitsuru Morita
B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information
Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
Patent number
8,044,408
Issue date
Oct 25, 2011
Nippon Steel Corporation
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Clinical thermometer
Patent number
5,017,018
Issue date
May 21, 1991
Nippon Steel Corporation
Tohru Iuchi
G01 - MEASURING TESTING
Information
Patent Grant
Measurement of sizes of falling particles
Patent number
4,912,987
Issue date
Apr 3, 1990
Nippon Steel Corporation
Hirokatsu Yashiro
G01 - MEASURING TESTING
Information
Patent Grant
Measurement of sizes of falling particles
Patent number
4,843,894
Issue date
Jul 4, 1989
Nippon Steel Corporation
Hirokatsu Yashiro
G01 - MEASURING TESTING
Information
Patent Grant
Method of and apparatus for imaging surface of object at high tempe...
Patent number
4,641,036
Issue date
Feb 3, 1987
Nippon Steel Corporation
Jiro Ohno
G01 - MEASURING TESTING
Information
Patent Grant
Method and apparatus for supervising charges in blast furnace using...
Patent number
4,641,083
Issue date
Feb 3, 1987
Nippon Steel Corporation
Jiro Ohno
C21 - METALLURGY OF IRON
Information
Patent Grant
Method and apparatus for measuring water level in a well
Patent number
4,621,264
Issue date
Nov 4, 1986
Nippon Steel Corporation
Hirokatsu Yashiro
E21 - EARTH DRILLING MINING
Patents Applications
last 30 patents
Information
Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
Publication number
20150075422
Publication date
Mar 19, 2015
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...
Publication number
20130320357
Publication date
Dec 5, 2013
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
Publication number
20130217213
Publication date
Aug 22, 2013
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
Publication number
20130049014
Publication date
Feb 28, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
Publication number
20130029158
Publication date
Jan 31, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
SAW WIRE
Publication number
20120216787
Publication date
Aug 30, 2012
Mitsuru Morita
B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information
Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
Publication number
20110278596
Publication date
Nov 17, 2011
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
Publication number
20100295059
Publication date
Nov 25, 2010
NIPPON STEEL CORPORATION
Tatsuo FUJIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
Low resistivity single crystal silicon carbide wafer
Publication number
20100080956
Publication date
Apr 1, 2010
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH