Hiroki Kondo

Person

Nagoya-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Carbon nanosheet and manufacturing method therefor
- Patent number 11,261,091
- Issue date Mar 1, 2022
- National University Corporation Nagoya University
- Masaru Hori
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of cyclic dry etching using etchant film
- Patent number 9,793,135
- Issue date Oct 17, 2017
- ASM IP Holding B.V.
- Masaru Zaitsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for producing group III nitride semiconductor...
- Patent number 9,773,667
- Issue date Sep 26, 2017
- National University Corporation Nagoya University
- Masaru Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device using metal nitride as insulating film and its...
- Patent number 8,067,309
- Issue date Nov 29, 2011
- Fujitsu Semiconductor Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,256,500
- Issue date Aug 14, 2007
- Fujitsu Limited
- Noriyuki Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using metal nitride as insulating film
- Patent number 7,042,093
- Issue date May 9, 2006
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a metallic oxide of high dielectric constant...
- Patent number 7,030,000
- Issue date Apr 18, 2006
- Nagoya University
- Akira Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,992,005
- Issue date Jan 31, 2006
- Fujitsu Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,750,541
- Issue date Jun 15, 2004
- Fujitsu Limited
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CARBON NANOSHEET AND MANUFACTURING METHOD THEREFOR
- Publication number 20210053830
- Publication date Feb 25, 2021
- National University Corporation Tokai National Higher Education and Research...
- Masaru HORI
- B82 - NANO-TECHNOLOGY
Information Patent Application
Apparatus and Method for Producing Group III Nitride Semiconductor...
- Publication number 20150140788
- Publication date May 21, 2015
- National University Corporation Nagoya University
- Masaru Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR FORMING CONDUCTIVE FILM
- Publication number 20150056381
- Publication date Feb 26, 2015
- NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
- Masaru Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20090042386
- Publication date Feb 12, 2009
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film
- Publication number 20070252280
- Publication date Nov 1, 2007
- Fujitsu Limited
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20060145348
- Publication date Jul 6, 2006
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a silicon nanocrystal, silicon nanocrystal,...
- Publication number 20050087792
- Publication date Apr 28, 2005
- National University Corporation Nagoya University
- Hiroki Kondo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for fabricating a metallic oxide of high dielectric constant...
- Publication number 20040259337
- Publication date Dec 23, 2004
- NAGOYA UNIVERSITY
- Akira Sakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040188839
- Publication date Sep 30, 2004
- FUJITSU LIMITED
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device using metal nitride as insulating film and its...
- Publication number 20040004287
- Publication date Jan 8, 2004
- FUJITSU LIMITED
- Noriyoshi Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020158338
- Publication date Oct 31, 2002
- FUJITSU LIMITED
- Nobuyuki Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS

Hiroki Kondo

Person

Patents Grantslast 30 patents

Carbon nanosheet and manufacturing method therefor

Method of cyclic dry etching using etchant film

Apparatus and method for producing group III nitride semiconductor...

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device using metal nitride as insulating film

Semiconductor device using metal nitride as insulating film

Method for fabricating a metallic oxide of high dielectric constant...

Semiconductor device and method of manufacturing the same

Semiconductor device

Patents Applicationslast 30 patents

CARBON NANOSHEET AND MANUFACTURING METHOD THEREFOR

Apparatus and Method for Producing Group III Nitride Semiconductor...

METHOD FOR FORMING CONDUCTIVE FILM

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device using metal nitride as insulating film

Semiconductor device using metal nitride as insulating film and its...

Method for fabricating a silicon nanocrystal, silicon nanocrystal,...

Method for fabricating a metallic oxide of high dielectric constant...

Semiconductor device and method of manufacturing the same

Semiconductor device using metal nitride as insulating film and its...

Semiconductor device and method of manufacturing the same