Hiroki WATANABE

Person

Tokai-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal and method for producing silicon car...
- Patent number 10,253,431
- Issue date Apr 9, 2019
- Denso Corporation
- Hiroyuki Kondo
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 8,980,003
- Issue date Mar 17, 2015
- Denso Corporation
- Hiroki Watanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fuel injection control system for internal combustion engine
- Patent number 8,904,997
- Issue date Dec 9, 2014
- Denso Corporation
- Hiroki Watanabe
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 8,525,223
- Issue date Sep 3, 2013
- Denso Corporation
- Hiroki Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide single crystal
- Patent number 8,518,809
- Issue date Aug 27, 2013
- Denso Corporation
- Hiroki Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Patent number 8,470,091
- Issue date Jun 25, 2013
- Denso Corporation
- Yasuo Kitou
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CRYSTALLINE OXIDE FILM, MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE
- Publication number 20230253462
- Publication date Aug 10, 2023
- FLOSFIA INC.
- Takashi SHINOHE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230116302
- Publication date Apr 13, 2023
- DENSO CORPORATION
- MASATAKE NAGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CAR...
- Publication number 20150361586
- Publication date Dec 17, 2015
- Denso Corporation
- Hiroyuki KONDO
- C30 - CRYSTAL GROWTH
Information Patent Application
FUEL INJECTION CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE
- Publication number 20130000606
- Publication date Jan 3, 2013
- DENSO CORPORATION
- Hiroki Watanabe
- F02 - COMBUSTION ENGINES HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120273801
- Publication date Nov 1, 2012
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hiroki WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20120142173
- Publication date Jun 7, 2012
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE
- Publication number 20110203513
- Publication date Aug 25, 2011
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC single crystal substrate, SiC single crystal epitaxial wafer, a...
- Publication number 20100200866
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Yasuo Kitou
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20100199910
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH

Hiroki WATANABE

Person

Patents Grantslast 30 patents

Silicon carbide single crystal and method for producing silicon car...

Method of manufacturing silicon carbide single crystal

Fuel injection control system for internal combustion engine

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystal

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

Patents Applicationslast 30 patents

CRYSTALLINE OXIDE FILM, MULTILAYER STRUCTURE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CAR...

FUEL INJECTION CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE

SILICON CARBIDE SEMICONDUCTOR DEVICE

MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE

SiC single crystal substrate, SiC single crystal epitaxial wafer, a...

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL