TREA

Hiromasa SUO

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  • Tokyo, JP
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Patents Grantslast 30 patents

  • Information Patent Grant

    SiC substrate and SiC ingot
    • Patent number 12,252,810
    • Issue date Mar 18, 2025
    • Resonac Corporation
    • Masato Ito
    • C30 - CRYSTAL GROWTH
  • Information Patent Grant

    SiC substrate and SiC epitaxial wafer
    • Patent number 12,252,809
    • Issue date Mar 18, 2025
    • Resonac Corporation
    • Yoshitaka Nishihara
    • C30 - CRYSTAL GROWTH
  • Information Patent Grant

    SiC epitaxial wafer
    • Patent number 12,215,439
    • Issue date Feb 4, 2025
    • Resonac Corporation
    • Hiromasa Suo
    • C30 - CRYSTAL GROWTH
  • Information Patent Grant

    SiC substrate and SiC ingot
    • Patent number 12,151,941
    • Issue date Nov 26, 2024
    • Resonac Corporation
    • Masato Ito
    • C01 - INORGANIC CHEMISTRY
  • Information Patent Grant

    SiC substrate and sic epitaxial wafer
    • Patent number 12,132,085
    • Issue date Oct 29, 2024
    • Resonac Corporation
    • Hiromasa Suo
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    SiC substrate and SiC ingot
    • Patent number 12,037,249
    • Issue date Jul 16, 2024
    • Resonac Corporation
    • Masato Ito
    • C01 - INORGANIC CHEMISTRY
  • Information Patent Grant

    SiC substrate and SiC ingot
    • Patent number 11,939,699
    • Issue date Mar 26, 2024
    • Resonac Corporation
    • Masato Ito
    • C01 - INORGANIC CHEMISTRY
  • Information Patent Grant

    SiC substrate and SiC epitaxial wafer
    • Patent number 11,866,846
    • Issue date Jan 9, 2024
    • Resonac Corporation
    • Hiromasa Suo
    • C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents