Hiromu Shiomi

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide epitaxial substrate and silicon carbide semiconduct...
- Patent number 12,125,881
- Issue date Oct 22, 2024
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,233,125
- Issue date Jan 25, 2022
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky semiconductor device with junction termination extensions
- Patent number 10,903,374
- Issue date Jan 26, 2021
- Sumitomo Electric Industries, Ltd.
- Hidenori Kitai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, and method for manufacturing...
- Patent number 10,707,299
- Issue date Jul 7, 2020
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,453,952
- Issue date Oct 22, 2019
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,424,642
- Issue date Sep 24, 2019
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 10,062,750
- Issue date Aug 28, 2018
- Fuji Electric Co., Ltd.
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 9,978,840
- Issue date May 22, 2018
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 9,954,054
- Issue date Apr 24, 2018
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 9,082,683
- Issue date Jul 14, 2015
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 8,883,619
- Issue date Nov 11, 2014
- Sumitomo Electric Industries, Ltd
- Hideto Tamaso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,877,656
- Issue date Nov 4, 2014
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of cleaning silicon carbide semiconductor
- Patent number 8,785,301
- Issue date Jul 22, 2014
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,759,187
- Issue date Jun 24, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,652,954
- Issue date Feb 18, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device
- Patent number 8,642,476
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 8,642,436
- Issue date Feb 4, 2014
- Sumitomo Electric Industries, Ltd
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 8,609,521
- Issue date Dec 17, 2013
- Sumitomo Electric Industries, Ltd
- Ryosuke Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III nitride semiconductor electronic device, method for manufacturi...
- Patent number 8,502,310
- Issue date Aug 6, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor epitaxial layer and method...
- Patent number 8,349,078
- Issue date Jan 8, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal, silicon carbide substrate and manuf...
- Patent number 8,013,343
- Issue date Sep 6, 2011
- Sumitomo Electric Industries, Ltd
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating gallium nitride based semiconductor electron...
- Patent number 7,998,836
- Issue date Aug 16, 2011
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of SiC single crystal growth and SiC single crystal
- Patent number 7,837,789
- Issue date Nov 23, 2010
- Toyota Jidosha Kabushiki Kaisha
- Tsunenobu Kimoto
Information Patent Grant
SiC wafer, SiC semiconductor device, and production method of SiC w...
- Patent number 6,734,461
- Issue date May 11, 2004
- Sixon Inc.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sic single crystal and method for growing the same
- Patent number 6,660,084
- Issue date Dec 9, 2003
- Sixon, Inc.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,391,109
- Issue date May 21, 2002
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Tool tip and bonding tool comprising the tool tip and control metho...
- Patent number 6,270,898
- Issue date Aug 7, 2001
- Sumitomo Electric Industries, Ltd.
- Katsuko Yamamoto
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Electron-emitting element, method of making the same, and electroni...
- Patent number 6,267,637
- Issue date Jul 31, 2001
- Sumitomo Electric Industries, Ltd.
- Hirohisa Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making SiC single crystal and apparatus for making SiC si...
- Patent number 6,193,797
- Issue date Feb 27, 2001
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electron-emitting element
- Patent number 6,184,611
- Issue date Feb 6, 2001
- Sumitomo Electric Industries, Ltd.
- Hirohisa Saito
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS
- Publication number 20240295047
- Publication date Sep 5, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...
- Publication number 20220059658
- Publication date Feb 24, 2022
- Sumitomo Electric Industries, Ltd.
- Tsutomu HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20200279921
- Publication date Sep 3, 2020
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200251600
- Publication date Aug 6, 2020
- Sumitomo Electric Industries, Ltd.
- Hidenori KITAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180331209
- Publication date Nov 15, 2018
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180315813
- Publication date Nov 1, 2018
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180286979
- Publication date Oct 4, 2018
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20180040690
- Publication date Feb 8, 2018
- Fuji Electric Co., Ltd.
- Yusuke KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20170141186
- Publication date May 18, 2017
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20170133466
- Publication date May 11, 2017
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...
- Publication number 20170133504
- Publication date May 11, 2017
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...
- Publication number 20170110534
- Publication date Apr 20, 2017
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20140120682
- Publication date May 1, 2014
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20140057461
- Publication date Feb 27, 2014
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20130221375
- Publication date Aug 29, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130137254
- Publication date May 30, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130102141
- Publication date Apr 25, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu SHIOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND D...
- Publication number 20130045592
- Publication date Feb 21, 2013
- Sumitomo Electric Industries, Ltd.
- Tomihito Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130040445
- Publication date Feb 14, 2013
- Sumitomo Electric Industries, Ltd.
- Ryosuke Kubota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR THIN-FILM MANUFACTURING METHOD, SEMICONDUCTOR THIN-FI...
- Publication number 20120231615
- Publication date Sep 13, 2012
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND APPARATUS OF FABRICATING SILICON CARBIDE SEMICONDUCTOR D...
- Publication number 20120214309
- Publication date Aug 23, 2012
- Sumitomo Electric Industries, Ltd.
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTU...
- Publication number 20120211770
- Publication date Aug 23, 2012
- Sumitomo Electric Industries, Ltd.
- Hiromu SHIOMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120208302
- Publication date Aug 16, 2012
- Sumitomo Electric Industries, Ltd.
- Satomi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120184092
- Publication date Jul 19, 2012
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20120164810
- Publication date Jun 28, 2012
- Sumitomo Electric Industries, Ltd.
- Naoki Ooi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR
- Publication number 20120149175
- Publication date Jun 14, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji WADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20120129326
- Publication date May 24, 2012
- Sumitomo Electric Industries, Ltd.
- Hideto TAMASO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMI...
- Publication number 20120119225
- Publication date May 17, 2012
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120104556
- Publication date May 3, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- H01 - BASIC ELECTRIC ELEMENTS

Hiromu Shiomi

Person

Patents Grantslast 30 patents

Silicon carbide epitaxial substrate and silicon carbide semiconduct...

Silicon carbide semiconductor device and method of manufacturing si...

Schottky semiconductor device with junction termination extensions

Silicon carbide semiconductor device, and method for manufacturing...

Semiconductor device

Silicon carbide semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Silicon carbide semiconductor device and method for manufacturing t...

Silicon carbide semiconductor device and method for manufacturing t...

Method of manufacturing silicon carbide semiconductor device

Method for manufacturing semiconductor device

Method for manufacturing silicon carbide semiconductor device

Method of cleaning silicon carbide semiconductor

Method of manufacturing silicon carbide semiconductor device

Method for manufacturing silicon carbide semiconductor device

Method for manufacturing silicon carbide semiconductor device

Method of manufacturing silicon carbide semiconductor device

Method of manufacturing semiconductor device

III nitride semiconductor electronic device, method for manufacturi...

Method of forming nitride semiconductor epitaxial layer and method...

Silicon carbide single crystal, silicon carbide substrate and manuf...

Method for fabricating gallium nitride based semiconductor electron...

Method of SiC single crystal growth and SiC single crystal

SiC wafer, SiC semiconductor device, and production method of SiC w...

Sic single crystal and method for growing the same

Method of making SiC single crystal and apparatus for making SiC si...

Tool tip and bonding tool comprising the tool tip and control metho...

Electron-emitting element, method of making the same, and electroni...

Method of making SiC single crystal and apparatus for making SiC si...

Electron-emitting element

Patents Applicationslast 30 patents

SIC SINGLE-CRYSTAL GROWTH APPARATUS

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCT...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...

SILICON CARBIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND D...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR THIN-FILM MANUFACTURING METHOD, SEMICONDUCTOR THIN-FI...

METHOD AND APPARATUS OF FABRICATING SILICON CARBIDE SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE, COMBINED SUBSTRATE, AND METHODS FOR MANUFACTU...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD OF CLEANING SILICON CARBIDE SEMICONDUCTOR

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMI...

POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME