Hironori Itoh

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 12,014,924
- Issue date Jun 18, 2024
- Sumitomo Electric Industries, Ltd.
- Kenji Kanbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate
- Patent number 11,373,868
- Issue date Jun 28, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate having grooves extending along...
- Patent number 11,004,941
- Issue date May 11, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,865,501
- Issue date Dec 15, 2020
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,825,903
- Issue date Nov 3, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,811,500
- Issue date Oct 20, 2020
- Sumitomo Electric Industries, Ltd
- Hironori Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate having grooves extending along...
- Patent number 10,770,550
- Issue date Sep 8, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide epitaxial substrate, metho...
- Patent number 10,697,086
- Issue date Jun 30, 2020
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,612,160
- Issue date Apr 7, 2020
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate having a silicon carbide layer...
- Patent number 10,490,634
- Issue date Nov 26, 2019
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 10,472,736
- Issue date Nov 12, 2019
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate and method for manufacturing si...
- Patent number 10,396,163
- Issue date Aug 27, 2019
- Sumitomo Electric Industries, Ltd
- Keiji Wada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial substrate and method of manufacturing sil...
- Patent number 10,121,865
- Issue date Nov 6, 2018
- Sumitomo Electric Industries, Ltd
- Tsutomu Hori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial wafer and method for manufacturing same
- Patent number 9,957,641
- Issue date May 1, 2018
- Sumitomo Electric Industries, Ltd
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20230059737
- Publication date Feb 23, 2023
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20220044934
- Publication date Feb 10, 2022
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20210320005
- Publication date Oct 14, 2021
- Kenji KANBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20200052074
- Publication date Feb 13, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20200013858
- Publication date Jan 9, 2020
- Sumitomo Electric Industries, Ltd.
- Hironori ITOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190355820
- Publication date Nov 21, 2019
- Sumitomo Electric Industries, Ltd.
- Keiji WADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190019868
- Publication date Jan 17, 2019
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...
- Publication number 20190013198
- Publication date Jan 10, 2019
- Sumitomo Electric Industries, Ltd.
- Hironori Itoh
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20180277635
- Publication date Sep 27, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20180245238
- Publication date Aug 30, 2018
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHO...
- Publication number 20180237942
- Publication date Aug 23, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Wada
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE
- Publication number 20180233562
- Publication date Aug 16, 2018
- Sumitomo Electric Industries, Ltd.
- Taro NISHIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20180209064
- Publication date Jul 26, 2018
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...
- Publication number 20170288025
- Publication date Oct 5, 2017
- Sumitomo Electric Industries, Ltd.
- Tsutomu Hori
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
- Publication number 20160326668
- Publication date Nov 10, 2016
- Sumitomo Electric Industries, Ltd.
- Taro Nishiguchi
- C30 - CRYSTAL GROWTH

Hironori Itoh

Person

Patents Grantslast 30 patents

Silicon carbide epitaxial substrate and method for manufacturing si...

Method for manufacturing silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate having grooves extending along...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial substrate having grooves extending along...

Method for manufacturing silicon carbide epitaxial substrate, metho...

Epitaxial wafer and method for manufacturing same

Silicon carbide epitaxial substrate having a silicon carbide layer...

Epitaxial wafer and method for manufacturing same

Silicon carbide epitaxial substrate and method for manufacturing si...

Silicon carbide epitaxial substrate and method of manufacturing sil...

Epitaxial wafer and method for manufacturing same

Patents Applicationslast 30 patents

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHO...

SILICON CARBIDE EPITAXIAL SUBSTRATE

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SIL...

EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME