Hiroshi Kawarada

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Yokohama, JP

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Patents Grantslast 30 patents

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Field-effect transistor
- Patent number 6,833,059
- Issue date Dec 21, 2004
- Japan Science and Technology Corporation
- Hiroshi Kawarada
- G01 - MEASURING TESTING
Information Patent Grant
CVD method of manufacturing diamond crystal
- Patent number 6,060,118
- Issue date May 9, 2000
- Tokyo Gas Co., Ltd.
- Takefumi Ishikura
- C30 - CRYSTAL GROWTH
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Hydrogen-terminated diamond MISFET and its manufacturing method
- Patent number 6,025,211
- Issue date Feb 15, 2000
- Tokyo Gas Co., Ltd.
- Takefumi Ishikura
- H01 - BASIC ELECTRIC ELEMENTS
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Hydrogen-terminated diamond misfet and its manufacturing method
- Patent number 5,854,496
- Issue date Dec 29, 1998
- Tokyo Gas Co., Ltd.
- Takefumi Ishikura
- H01 - BASIC ELECTRIC ELEMENTS
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Diamond crystal
- Patent number 5,792,556
- Issue date Aug 11, 1998
- Tokyo Gas Chemicals, Co., Ltd.
- Takefumi Ishikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Element-isolated hydrogen-terminated diamond semiconductor device a...
- Patent number 5,786,604
- Issue date Jul 28, 1998
- Tokyo Gas Co., Ltd.
- Satoshi Yamashita
- H01 - BASIC ELECTRIC ELEMENTS