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Hiroshi TSUGE
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Tokyo, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Method for producing silicon carbide single crystal and silicon car...
Patent number
10,711,369
Issue date
Jul 14, 2020
Showa Denko K.K.
Shinya Sato
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Silicon carbide single crystal substrate and process for producing...
Patent number
10,119,200
Issue date
Nov 6, 2018
Showa Denko K.K.
Shinya Sato
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing silicon carbide single-crystal ingot and silic...
Patent number
10,066,316
Issue date
Sep 4, 2018
Showa Denko K.K.
Komomo Tani
C30 - CRYSTAL GROWTH
Information
Patent Grant
Single-crystal silicon carbide and single-crystal silicon carbide w...
Patent number
9,777,403
Issue date
Oct 3, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
Patent number
9,691,607
Issue date
Jun 27, 2017
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
Silicon carbide single crystal wafer and manufacturing method for same
Patent number
9,234,297
Issue date
Jan 12, 2016
Nippon Steel & Sumitomo Metal Corporation
Shinya Sato
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Apparatus for manufacturing single-crystal silicon carbide
Patent number
9,068,277
Issue date
Jun 30, 2015
Nippon Steel & Sumitomo Metal Corporation
Masashi Nakabayashi
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Crucible vessel and crucible cover having grooves for producing sin...
Patent number
8,936,680
Issue date
Jan 20, 2015
Nippon Steel & Sumitomo Metal Corporation
Masakazu Katsuno
C30 - CRYSTAL GROWTH
Information
Patent Grant
Production process of epitaxial silicon carbide single crystal subs...
Patent number
8,927,396
Issue date
Jan 6, 2015
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information
Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
Patent number
8,901,570
Issue date
Dec 2, 2014
Nippon Steel & Sumitomo Metal Corporation
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
Patent number
8,044,408
Issue date
Oct 25, 2011
Nippon Steel Corporation
Tatsuo Fujimoto
C30 - CRYSTAL GROWTH
Information
Patent Grant
Single-crystal silicon carbide ingot, and substrate and epitaxial w...
Patent number
7,972,704
Issue date
Jul 5, 2011
Nippon Steel Corporation
Noboru Ohtani
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Patents Applications
last 30 patents
Information
Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...
Publication number
20190024257
Publication date
Jan 24, 2019
SHOWA DENKO K.K.
Shinya SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...
Publication number
20180066380
Publication date
Mar 8, 2018
NIPPON STEEL & SUMITOMO METAL CORPORATION
Komomo TANI
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CAR...
Publication number
20170342593
Publication date
Nov 30, 2017
NIPPON STEEL & SUMITOMO METAL CORPORATION
Shinya SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...
Publication number
20150267319
Publication date
Sep 24, 2015
NIPPON STEEL & SUMITOMO METAL CORPORATION
Shinya Sato
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
Publication number
20150075422
Publication date
Mar 19, 2015
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME
Publication number
20140363607
Publication date
Dec 11, 2014
NIPPON STEEL & SUMITOMO METAL CORPORATION
Shinya Sato
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...
Publication number
20130320357
Publication date
Dec 5, 2013
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
Publication number
20130217213
Publication date
Aug 22, 2013
NIPPON STEEL & SUMITOMO METAL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
Publication number
20130049014
Publication date
Feb 28, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
Publication number
20130029158
Publication date
Jan 31, 2013
NIPPON STEEL CORPORATION
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTI...
Publication number
20110308449
Publication date
Dec 22, 2011
Masakazu Katsuno
C30 - CRYSTAL GROWTH
Information
Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
Publication number
20110278596
Publication date
Nov 17, 2011
Takashi Aigo
C30 - CRYSTAL GROWTH
Information
Patent Application
SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE W...
Publication number
20110206929
Publication date
Aug 25, 2011
Masashi Nakabayashi
C30 - CRYSTAL GROWTH
Information
Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
Publication number
20100295059
Publication date
Nov 25, 2010
NIPPON STEEL CORPORATION
Tatsuo FUJIMOTO
C30 - CRYSTAL GROWTH
Information
Patent Application
SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...
Publication number
20100289033
Publication date
Nov 18, 2010
Noboru Ohtani
C30 - CRYSTAL GROWTH
Information
Patent Application
APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE
Publication number
20090205565
Publication date
Aug 20, 2009
Masashi Nakabayashi
C30 - CRYSTAL GROWTH