Hiroshi Yanagigawa

Person

Shiga, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power switch circuit having variable resistor coupled between input...
- Patent number 7,733,133
- Issue date Jun 8, 2010
- NEC Electronics Corporation
- Hiroshi Yanagigawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Charge pump circuit with reduced parasitic capacitance
- Patent number 7,439,795
- Issue date Oct 21, 2008
- NEC Electronics Corporation
- Hiroshi Yanagigawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Dead time control circuit capable of adjusting temperature characte...
- Patent number 7,400,163
- Issue date Jul 15, 2008
- NEC Electronics Corporation
- Hiroshi Yanagigawa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High withstand voltage diode and method for manufacturing same
- Patent number 6,384,453
- Issue date May 7, 2002
- NEC Corporation
- Hiroshi Yanagigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown-voltage diode with electric-field relaxation region
- Patent number 6,002,158
- Issue date Dec 14, 1999
- NEC Corporation
- Hiroshi Yanagigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,767,556
- Issue date Jun 16, 1998
- NEC Corporation
- Hiroshi Yanagigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diode and capable of device protection
- Patent number 5,596,216
- Issue date Jan 21, 1997
- NEC Corporation
- Hiroshi Yanagigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage MOS transistor
- Patent number 5,523,601
- Issue date Jun 4, 1996
- NEC Corporation
- Hiroshi Yanagigawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Bidirectional switch having control gate embedded in semiconductor...
- Publication number 20100001314
- Publication date Jan 7, 2010
- NEC Electronics Corporation
- Hiroshi YANAGIGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power switch circuit having variable resistor coupled between input...
- Publication number 20090179685
- Publication date Jul 16, 2009
- NEC Electronics Corporation
- Hiroshi Yanagigawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
CHARGE PUMP CIRCUIT WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20080111598
- Publication date May 15, 2008
- NEC ELECTRONICS CORPORATION
- Hiroshi YANAGIGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20080029813
- Publication date Feb 7, 2008
- NEC ELECTRONICS CORPORATION
- Hiroshi YANAGIGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dead time control circuit capable of adjusting temperature characte...
- Publication number 20060290401
- Publication date Dec 28, 2006
- NEC Electronics Corporation
- Hiroshi Yanagigawa
- H03 - BASIC ELECTRONIC CIRCUITRY

Hiroshi Yanagigawa

Person

Patents Grantslast 30 patents

Power switch circuit having variable resistor coupled between input...

Charge pump circuit with reduced parasitic capacitance

Dead time control circuit capable of adjusting temperature characte...

High withstand voltage diode and method for manufacturing same

High breakdown-voltage diode with electric-field relaxation region

Field effect transistor

Semiconductor device with diode and capable of device protection

High-breakdown-voltage MOS transistor

Patents Applicationslast 30 patents

Bidirectional switch having control gate embedded in semiconductor...

Power switch circuit having variable resistor coupled between input...

CHARGE PUMP CIRCUIT WITH REDUCED PARASITIC CAPACITANCE

Semiconductor device and method of manufacturing the same

Dead time control circuit capable of adjusting temperature characte...