Hirotoshi Yamagishi

Person

Gunma, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Single crystal growth apparatus and single crystal growth method
- Patent number 6,372,040
- Issue date Apr 16, 2002
- Super Silicon Crystal Research Institute Corp.
- Hirotoshi Yamagishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal with no crystal defect in peripheral part of...
- Patent number 6,120,749
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing apparatus and single crystal growing method
- Patent number 6,117,234
- Issue date Sep 12, 2000
- Super Silicon Crystal Research Institute Corp.
- Hirotoshi Yamagishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing method and apparatus
- Patent number 6,113,686
- Issue date Sep 5, 2000
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of single crystal and apparatus of manufacturi...
- Patent number 5,980,630
- Issue date Nov 9, 1999
- Shin-Etsu Handotai, Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing silicon single crystal
- Patent number 5,871,583
- Issue date Feb 16, 1999
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal holding apparatus
- Patent number 5,843,229
- Issue date Dec 1, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat treatment of Si single crystal
- Patent number 5,834,322
- Issue date Nov 10, 1998
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-frequency induction heater and method of producing semiconduct...
- Patent number 5,792,258
- Issue date Aug 11, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of single crystal
- Patent number 5,792,255
- Issue date Aug 11, 1998
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and a method for growing a single crystal
- Patent number 5,788,718
- Issue date Aug 4, 1998
- Shin-Etsu Handotai Co., Ltd.
- Hirotoshi Yamagishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growing apparatus
- Patent number 5,785,758
- Issue date Jul 28, 1998
- Hirotoshi Yamagishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pulling apparatus
- Patent number 5,735,951
- Issue date Apr 7, 1998
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal with low defect density and method of produc...
- Patent number 5,728,211
- Issue date Mar 17, 1998
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crucible for pulling silicon single crystal
- Patent number 5,720,809
- Issue date Feb 24, 1998
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing a silicon single crystal by a float-zone me...
- Patent number 5,688,321
- Issue date Nov 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for testing electrical properties of silicon single crystal
- Patent number 5,688,319
- Issue date Nov 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- G01 - MEASURING TESTING
Information Patent Grant
Method for the preparation of a single crystal of silicon with decr...
- Patent number 5,667,584
- Issue date Sep 16, 1997
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pulling apparatus
- Patent number 5,667,588
- Issue date Sep 16, 1997
- Shin-Etsu Handotai Co., Ltd.
- Eiichi Iino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal by a float-zone method
- Patent number 5,556,461
- Issue date Sep 17, 1996
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
High-frequency induction heating coil
- Patent number 5,550,354
- Issue date Aug 27, 1996
- Shin-Etsu Handotai Co., Ltd.
- Masanori Kimura
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for testing electrical properties of silicon single crystal
- Patent number 5,534,112
- Issue date Jul 9, 1996
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- G01 - MEASURING TESTING
Information Patent Grant
Method of growing silicon single crystals
- Patent number 5,501,172
- Issue date Mar 26, 1996
- Shin-Etsu Handotai Co., Ltd.
- Toshinari Murai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for supplying granular raw material for a semiconductor s...
- Patent number 5,462,010
- Issue date Oct 31, 1995
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for testing quality of silicon wafer
- Patent number 5,386,796
- Issue date Feb 7, 1995
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pulling apparatus
- Patent number 5,373,805
- Issue date Dec 20, 1994
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal pulling apparatus
- Patent number 5,361,721
- Issue date Nov 8, 1994
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for pulling up semi-conductor single crystal
- Patent number 5,359,959
- Issue date Nov 1, 1994
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for treatment of semiconductor wafer
- Patent number 5,348,893
- Issue date Sep 20, 1994
- Shin-Etsu Handotai Co., Ltd.
- Hirotoshi Yamagishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon single crystal
- Patent number 5,340,434
- Issue date Aug 23, 1994
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH

Hirotoshi Yamagishi

Person

Patents Grantslast 30 patents

Single crystal growth apparatus and single crystal growth method

Silicon single crystal with no crystal defect in peripheral part of...

Single crystal growing apparatus and single crystal growing method

Single crystal growing method and apparatus

Manufacturing method of single crystal and apparatus of manufacturi...

Apparatus for producing silicon single crystal

Crystal holding apparatus

Heat treatment of Si single crystal

High-frequency induction heater and method of producing semiconduct...

Manufacturing method of single crystal

Apparatus and a method for growing a single crystal

Single crystal growing apparatus

Single crystal pulling apparatus

Silicon single crystal with low defect density and method of produc...

Crucible for pulling silicon single crystal

Apparatus for producing a silicon single crystal by a float-zone me...

Method for testing electrical properties of silicon single crystal

Method for the preparation of a single crystal of silicon with decr...

Single crystal pulling apparatus

Method for producing a silicon single crystal by a float-zone method

High-frequency induction heating coil

Method for testing electrical properties of silicon single crystal

Method of growing silicon single crystals

Apparatus for supplying granular raw material for a semiconductor s...

Method for testing quality of silicon wafer

Single crystal pulling apparatus

Single crystal pulling apparatus

Method for pulling up semi-conductor single crystal

Method for treatment of semiconductor wafer

Process for producing silicon single crystal