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Hiroyoshi ITOH
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Osaka, JP
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Patents Grants
last 30 patents
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Patent Grant
Magnetic tunnel junction device and magnetic resistance memory device
Patent number
10,879,451
Issue date
Dec 29, 2020
Samsung Electronics Co., Ltd.
Hiroyoshi Itoh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Magnetic tunnel junction device utilizing lattice strain
Patent number
10,170,695
Issue date
Jan 1, 2019
Samsung Electronics Co., Ltd.
Yoshiaki Sonobe
G11 - INFORMATION STORAGE
Patents Applications
last 30 patents
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Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC RESISTANCE MEMORY DEVICE
Publication number
20200058846
Publication date
Feb 20, 2020
Samsung Electronics Co., Ltd.
Hiroyoshi Itoh
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE
Publication number
20170117458
Publication date
Apr 27, 2017
Yoshiaki SONOBE
G11 - INFORMATION STORAGE
Information
Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETORESISTIVE RANDOM ACCESS...
Publication number
20160087194
Publication date
Mar 24, 2016
Samsung Electronics Co., Ltd.
Hiroyoshi ITOH
G11 - INFORMATION STORAGE