Hiroyuki Ito

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Techniques to increase CMOS image sensor well depth by cyrogenic io...
- Patent number 11,830,739
- Issue date Nov 28, 2023
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light deflection device
- Patent number 11,067,746
- Issue date Jul 20, 2021
- National University Corporation Yokohama National University
- Toshihiko Baba
- G02 - OPTICS
Information Patent Grant
Plasma doping method with gate shutter
- Patent number 8,652,953
- Issue date Feb 18, 2014
- Panasonic Corporation
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping device with gate shutter
- Patent number 8,257,501
- Issue date Sep 4, 2012
- Panasonic Corporation
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping method and apparatus
- Patent number 8,129,202
- Issue date Mar 6, 2012
- Panasonic Corporation
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device by plasma doping a semi...
- Patent number 8,105,926
- Issue date Jan 31, 2012
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping method and plasma doping apparatus
- Patent number 7,939,388
- Issue date May 10, 2011
- Panasonic Corporation
- Tomohiro Okumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma doping method and apparatus employed in the same
- Patent number 7,871,853
- Issue date Jan 18, 2011
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing method and plasma processing apparatus
- Patent number 7,858,155
- Issue date Dec 28, 2010
- Panasonic Corporation
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of fabricating semiconductor device
- Patent number 7,858,479
- Issue date Dec 28, 2010
- Panasonic Corporation
- Bunji Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing the same
- Patent number 7,800,165
- Issue date Sep 21, 2010
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping method
- Patent number 7,790,586
- Issue date Sep 7, 2010
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming impurity-introduced layer, method for cleaning o...
- Patent number 7,759,254
- Issue date Jul 20, 2010
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device and semiconductor produci...
- Patent number 7,754,503
- Issue date Jul 13, 2010
- Panasonic Corporation
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity introducing apparatus and impurity introducing method
- Patent number 7,626,184
- Issue date Dec 1, 2009
- Panasonic Corporation
- Bunji Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity introducing apparatus and impurity introducing method
- Patent number 7,622,725
- Issue date Nov 24, 2009
- Panaosnic Corporation
- Bunji Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for plasma processing
- Patent number 7,601,619
- Issue date Oct 13, 2009
- Panasonic Corporation
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping impurities, and electronic element using the same
- Patent number 7,582,492
- Issue date Sep 1, 2009
- Panasonic Corporation
- Cheng-Guo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge neutralizing device
- Patent number 7,557,364
- Issue date Jul 7, 2009
- Panasonic Corporation
- Hiroyuki Ito
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Plasma doping method
- Patent number 7,407,874
- Issue date Aug 5, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma doping method and plasma doping apparatus
- Patent number 7,358,511
- Issue date Apr 15, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma doping method
- Patent number 7,348,264
- Issue date Mar 25, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Waveguide and microwave ion source equipped with the waveguide
- Patent number 7,166,965
- Issue date Jan 23, 2007
- Applied Materials, Inc.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron flood apparatus and ion implantation system
- Patent number 7,126,138
- Issue date Oct 24, 2006
- Applied Materials, Inc.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method, SOI wafer manufacturing method and ion imp...
- Patent number 7,064,049
- Issue date Jun 20, 2006
- Applied Materials, Inv.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation method and method for manufacturing SOI wafer
- Patent number 6,927,148
- Issue date Aug 9, 2005
- Applied Materials, Inc.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for ion implantation
- Patent number 6,867,422
- Issue date Mar 15, 2005
- Applied Materials, Inc.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation apparatus and method of implanting ions to prevent...
- Patent number 6,452,197
- Issue date Sep 17, 2002
- Applied Materials, Inc.
- Hiroyuki Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for neutralizing space charge in an ion beam
- Patent number 6,359,286
- Issue date Mar 19, 2002
- Applied Materials, Inc.
- Hiroyuki Ito
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Image-information storage regenerating device
- Patent number 5,594,736
- Issue date Jan 14, 1997
- Sharp Kabushiki Kaisha
- Masahiro Tatsumi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...
- Publication number 20220108893
- Publication date Apr 7, 2022
- Applied Materials, Inc.
- Hans-Joachim L. Gossmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT DEFLECTION DEVICE
- Publication number 20200225411
- Publication date Jul 16, 2020
- National University Corporation Yokohama National University
- Toshihiko BABA
- G02 - OPTICS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20130337641
- Publication date Dec 19, 2013
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20130323916
- Publication date Dec 5, 2013
- PANASONIC CORPORATION
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC APPARATUS, DISPLAY METHOD, AND PROGRAM
- Publication number 20130063384
- Publication date Mar 14, 2013
- PANASONIC CORPORATION
- Hiroyuki Ito
- G01 - MEASURING TESTING
Information Patent Application
PLASMA DOPING METHOD WITH GATE SHUTTER
- Publication number 20120285818
- Publication date Nov 15, 2012
- PANASONIC CORPORATION
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20120186519
- Publication date Jul 26, 2012
- PANASONIC CORPORATION
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20110217830
- Publication date Sep 8, 2011
- PANASONIC CORPORATION
- Tomohiro OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20100330782
- Publication date Dec 30, 2010
- PANASONIC CORPORATION
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20100098837
- Publication date Apr 22, 2010
- PANASONIC CORPORATION
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCI...
- Publication number 20100075489
- Publication date Mar 25, 2010
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD
- Publication number 20090233427
- Publication date Sep 17, 2009
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Doping Method and Apparatus
- Publication number 20090233383
- Publication date Sep 17, 2009
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Doping Method and Plasma Doping Apparatus
- Publication number 20090233385
- Publication date Sep 17, 2009
- PANASONIC CORPORATION
- Tomohiro Okumura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Plasma Doping Method and Apparatus Employed in the Same
- Publication number 20090186426
- Publication date Jul 23, 2009
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Doping Method and Apparatus
- Publication number 20090181526
- Publication date Jul 16, 2009
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Doping Method and Plasma Processing Device
- Publication number 20090176355
- Publication date Jul 9, 2009
- PANASONIC CORPORATION
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Impurity Introducing Apparatus and Impurity Introducing Method
- Publication number 20090140174
- Publication date Jun 4, 2009
- PANASONIC CORPORATION
- Bunji Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC W...
- Publication number 20090130335
- Publication date May 21, 2009
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for Plasma Processing
- Publication number 20090068769
- Publication date Mar 12, 2009
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR PLASMA DOPING
- Publication number 20090042321
- Publication date Feb 12, 2009
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Doping Method and Apparatus
- Publication number 20090035878
- Publication date Feb 5, 2009
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20090023262
- Publication date Jan 22, 2009
- Cheng-Guo Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD
- Publication number 20080318399
- Publication date Dec 25, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20080308871
- Publication date Dec 18, 2008
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Processing Method and Plasma Processing Apparatus
- Publication number 20080258082
- Publication date Oct 23, 2008
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DOPING METHOD AND APPARATUS
- Publication number 20080233723
- Publication date Sep 25, 2008
- Matsushita Electric Industrial Co., Ltd.
- Tomohiro Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD
- Publication number 20080210167
- Publication date Sep 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Bunji Mizino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Introducing Impurity
- Publication number 20080194086
- Publication date Aug 14, 2008
- Yuichiro Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20080179683
- Publication date Jul 31, 2008
- Matsushita Electric Industrial Co., Ltd.
- Yuichiro SASAKI
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Ito

Person

Patents Grantslast 30 patents

Techniques to increase CMOS image sensor well depth by cyrogenic io...

Light deflection device

Plasma doping method with gate shutter

Plasma doping device with gate shutter

Plasma doping method and apparatus

Method for producing a semiconductor device by plasma doping a semi...

Plasma doping method and plasma doping apparatus

Plasma doping method and apparatus employed in the same

Plasma processing method and plasma processing apparatus

Method and apparatus of fabricating semiconductor device

Semiconductor device and method for producing the same

Plasma doping method

Method for forming impurity-introduced layer, method for cleaning o...

Method for producing semiconductor device and semiconductor produci...

Impurity introducing apparatus and impurity introducing method

Impurity introducing apparatus and impurity introducing method

Method and apparatus for plasma processing

Method of doping impurities, and electronic element using the same

Charge neutralizing device

Plasma doping method

Plasma doping method and plasma doping apparatus

Plasma doping method

Waveguide and microwave ion source equipped with the waveguide

Electron flood apparatus and ion implantation system

Ion implantation method, SOI wafer manufacturing method and ion imp...

Ion implantation method and method for manufacturing SOI wafer

Apparatus for ion implantation

Ion implantation apparatus and method of implanting ions to prevent...

Method and apparatus for neutralizing space charge in an ion beam

Image-information storage regenerating device

Patents Applicationslast 30 patents

TECHNIQUES TO INCREASE CMOS IMAGE SENSOR WELL DEPTH BY CRYOGENIC IO...

LIGHT DEFLECTION DEVICE

PLASMA DOPING METHOD AND APPARATUS

PLASMA DOPING METHOD AND APPARATUS

ELECTRONIC APPARATUS, DISPLAY METHOD, AND PROGRAM

PLASMA DOPING METHOD WITH GATE SHUTTER

PLASMA DOPING METHOD AND APPARATUS

PLASMA DOPING METHOD AND APPARATUS

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

PLASMA DOPING METHOD AND APPARATUS

METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCI...

PLASMA DOPING METHOD

Plasma Doping Method and Apparatus

Plasma Doping Method and Plasma Doping Apparatus

Plasma Doping Method and Apparatus Employed in the Same

Plasma Doping Method and Apparatus

Plasma Doping Method and Plasma Processing Device

Impurity Introducing Apparatus and Impurity Introducing Method

PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, DIELECTRIC W...

Method and Apparatus for Plasma Processing

APPARATUS AND METHOD FOR PLASMA DOPING

Plasma Doping Method and Apparatus

Method for fabricating semiconductor device

PLASMA DOPING METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

Plasma Processing Method and Plasma Processing Apparatus

PLASMA DOPING METHOD AND APPARATUS

IMPURITY INTRODUCING APPARATUS AND IMPURITY INTRODUCING METHOD

Method of Introducing Impurity

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME