Hiroyuki Kamada

Person

Nishishirakawa-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Single-crystal pulling apparatus and single-crystal pulling method
- Patent number 12,227,872
- Issue date Feb 18, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal pulling apparatus with saddle-shaped superconducting...
- Patent number 12,188,153
- Issue date Jan 7, 2025
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling resistivity and N-type silicon single crystal
- Patent number 10,400,353
- Issue date Sep 3, 2019
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 10,066,322
- Issue date Sep 4, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 9,938,640
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treatment of silicon single crystal wafer
- Patent number 9,850,595
- Issue date Dec 26, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for evaluating concentration of defect in silicon single cry...
- Patent number 9,773,710
- Issue date Sep 26, 2017
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki Kamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a defect-controlled low-oxygen concentrati...
- Patent number 9,650,725
- Issue date May 16, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for evaluating silicon single crystal and method for manufac...
- Patent number 9,111,883
- Issue date Aug 18, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD
- Publication number 20230175166
- Publication date Jun 8, 2023
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD
- Publication number 20230138632
- Publication date May 4, 2023
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka TAKANO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170342596
- Publication date Nov 30, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CONTROLLING RESISTIVITY AND N-TYPE SILICON SINGLE CRYSTAL
- Publication number 20170260645
- Publication date Sep 14, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170037541
- Publication date Feb 9, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER
- Publication number 20170002480
- Publication date Jan 5, 2017
- Shin-Etsu Handotai Co., Ltd.
- Ryoji HOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR EVALUATING CONCENTRATION OF DEFECT IN SILICON SINGLE CRY...
- Publication number 20160300768
- Publication date Oct 13, 2016
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki KAMADA
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER
- Publication number 20150020728
- Publication date Jan 22, 2015
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRY...
- Publication number 20140379276
- Publication date Dec 25, 2014
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR EVALUATING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFAC...
- Publication number 20140363904
- Publication date Dec 11, 2014
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FO...
- Publication number 20130340671
- Publication date Dec 26, 2013
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON SINGLE CRYSTAL WAFER
- Publication number 20130323153
- Publication date Dec 5, 2013
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH

Hiroyuki Kamada

Person

Patents Grantslast 30 patents

Single-crystal pulling apparatus and single-crystal pulling method

Single-crystal pulling apparatus with saddle-shaped superconducting...

Method for controlling resistivity and N-type silicon single crystal

Method for heat treatment of silicon single crystal wafer

Method for heat treatment of silicon single crystal wafer

Method for heat treatment of silicon single crystal wafer

Method for evaluating concentration of defect in silicon single cry...

Method for manufacturing a defect-controlled low-oxygen concentrati...

Method for evaluating silicon single crystal and method for manufac...

Patents Applicationslast 30 patents

SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD

SINGLE-CRYSTAL PULLING APPARATUS AND SINGLE-CRYSTAL PULLING METHOD

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR CONTROLLING RESISTIVITY AND N-TYPE SILICON SINGLE CRYSTAL

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER

METHOD FOR EVALUATING CONCENTRATION OF DEFECT IN SILICON SINGLE CRY...

METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER

METHOD FOR CALCULATING NITROGEN CONCENTRATION IN SILICON SINGLE CRY...

METHOD FOR EVALUATING SILICON SINGLE CRYSTAL AND METHOD FOR MANUFAC...

SILICA GLASS CRUCIBLE, METHOD FOR MANUFACTURING SAME, AND METHOD FO...

SILICON SINGLE CRYSTAL WAFER