Hiroyuki Kishimoto

Follow

Person

Nonoichi Ishikawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Trench-gate MOS transistor and method for manufacturing the same
- Patent number 11,996,458
- Issue date May 28, 2024
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench vertical power MOSFET with channel including regions with di...
- Patent number 11,626,514
- Issue date Apr 11, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-gate MOS transistor and method for manufacturing
- Patent number 11,251,278
- Issue date Feb 15, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230207687
- Publication date Jun 29, 2023
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20220149168
- Publication date May 12, 2022
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210296489
- Publication date Sep 23, 2021
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20210202704
- Publication date Jul 1, 2021
- Kabushiki Kaisha Toshiba
- Hiroyuki Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS