Hiroyuki Miyazoe

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 12,225,833
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Takashi Ando
Information Patent Grant
BEOL fat wire level ground rule compatible embedded artificial inte...
- Patent number 11,956,975
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Percolation doping of inorganic-organic frameworks for multiple dev...
- Patent number 11,915,926
- Issue date Feb 27, 2024
- International Business Machines Corporation
- Leonidas Ernesto Ocola
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mitigating moisture driven degradation of silicon doped chalcogenides
- Patent number 11,889,771
- Issue date Jan 30, 2024
- International Business Machines Corporation
- Cheng-Wei Cheng
Information Patent Grant
Plasma co-doping to reduce the forming voltage in resistive random...
- Patent number 11,844,290
- Issue date Dec 12, 2023
- Tokyo Electron Limited
- Devi Koty
Information Patent Grant
Resistive random-access memory device with step height difference
- Patent number 11,730,070
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive bridging random access memory formed using selective bar...
- Patent number 11,647,639
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory structure and method for low programming voltag...
- Patent number 11,430,513
- Issue date Aug 30, 2022
- International Business Machines Corporation
- Soon-Cheon Seo
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked access device and resistive memory
- Patent number 11,289,650
- Issue date Mar 29, 2022
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices formed using selective barrier metal r...
- Patent number 11,276,732
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Grant
Layer-by-layer etching of poly-granular metal-based materials for s...
- Patent number 11,270,893
- Issue date Mar 8, 2022
- International Business Machines Corporation
- John M. Papalia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-free plasma etching for contact etching of resistive random...
- Patent number 11,258,012
- Issue date Feb 22, 2022
- Tokyo Electron Limited
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device with spacer for electrode isolation
- Patent number 11,177,319
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 11,158,795
- Issue date Oct 26, 2021
- International Business Machines Corporation
- Takashi Ando
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
High-resistance memory devices
- Patent number 11,043,535
- Issue date Jun 22, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory crossbar array with top electrode inner spacers
- Patent number 11,038,104
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical array of resistive switching devices having restricted fil...
- Patent number 10,991,763
- Issue date Apr 27, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor using template-assisted-sle...
- Patent number 10,923,348
- Issue date Feb 16, 2021
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen vacancy and filament-loss protection for resistive switching...
- Patent number 10,903,425
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Access device and phase change memory combination structure in back...
- Patent number 10,903,270
- Issue date Jan 26, 2021
- International Business Machines Corporation
- Robert Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multivalent oxide cap for analog switching resistive memory
- Patent number 10,892,408
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CBRAM by subtractive etching of metals
- Patent number 10,886,467
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory crossbar array with a multilayer hardmask
- Patent number 10,833,268
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multivalent oxide cap for analog switching resistive memory
- Patent number 10,797,235
- Issue date Oct 6, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film interconnects with large grains
- Patent number 10,727,121
- Issue date Jul 28, 2020
- ELPIS TECHNOLOGIES INC.
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive switching memory with replacement metal electrode
- Patent number 10,727,407
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure including airgaps and substractively etched...
- Patent number 10,727,114
- Issue date Jul 28, 2020
- International Business Machines Corporation
- Robert L. Bruce
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory crossbar array with top electrode inner spacers
- Patent number 10,672,980
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cryogenic patterning of magnetic tunnel junctions
- Patent number 10,622,553
- Issue date Apr 14, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC
- Publication number 20240074207
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF FORMING
- Publication number 20230329127
- Publication date Oct 12, 2023
- TOKYO ELECTRON LIMITED
- Devi Koty
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICE WITH STEP HEIGHT DIFFERENCE
- Publication number 20230301217
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
Information Patent Application
OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE
- Publication number 20230263077
- Publication date Aug 17, 2023
- International Business Machines Corporation
- TAKASHI ANDO
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES
- Publication number 20230200269
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...
- Publication number 20230180487
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERCOLATION DOPING OF INORGANIC - ORGANIC FRAMEWORKS FOR MULTIPLE D...
- Publication number 20230097847
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Leonidas Ernesto Ocola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...
- Publication number 20230079392
- Publication date Mar 16, 2023
- International Business Machines Corporation
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...
- Publication number 20220393107
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Devi KOTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...
- Publication number 20220271092
- Publication date Aug 25, 2022
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES
- Publication number 20220209113
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ACCESS DEVICE AND RESISTIVE MEMORY
- Publication number 20220181550
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE
- Publication number 20210391536
- Publication date Dec 16, 2021
- International Business Machines Corporation
- TAKASHI ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...
- Publication number 20210091141
- Publication date Mar 25, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR USING TEMPLATE-ASSISTED-SL...
- Publication number 20200381250
- Publication date Dec 3, 2020
- International Business Machines Corporation
- Hiroyuki MIYAZOE
- C30 - CRYSTAL GROWTH
Information Patent Application
RRAM DEVICE WITH SPACER FOR ELECTRODE ISOLATION
- Publication number 20200357852
- Publication date Nov 12, 2020
- International Business Machines Corporation
- HIROYUKI MIYAZOE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CBRAM BY SUBTRACTIVE ETCHING OF METALS
- Publication number 20200350499
- Publication date Nov 5, 2020
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYER-BY-LAYER ETCHING OF POLY-GRANULAR METAL-BASED MATERIALS FOR S...
- Publication number 20200321220
- Publication date Oct 8, 2020
- International Business Machines Corporation
- John M. Papalia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED ACCESS DEVICE AND RESISTIVE MEMORY
- Publication number 20200287135
- Publication date Sep 10, 2020
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM-ACCESS MEMORY DEVICE WITH STEP HEIGHT DIFFERENCE
- Publication number 20200274061
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CROSSBAR ARRAY WITH A MULTILAYER HARDMASK
- Publication number 20200274067
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE
- Publication number 20200263620
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Takashi Ando
- F01 - MACHINES OR ENGINES IN GENERAL ENGINE PLANTS IN GENERAL STEAM ENGINES
Information Patent Application
RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS
- Publication number 20200220078
- Publication date Jul 9, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...
- Publication number 20200203607
- Publication date Jun 25, 2020
- TOKYO ELECTRON LIMITED
- Devi Koty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ARRAY OF RESISTIVE SWITCHING DEVICES HAVING RESTRICTED FIL...
- Publication number 20200083293
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN VACANCY AND FILAMENT-LOSS PROTECTION FOR RESISTIVE SWITCHING...
- Publication number 20200075860
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE
- Publication number 20200052207
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS
- Publication number 20200028076
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Miyazoe

Person

Patents Grantslast 30 patents

Oxide-based resistive memory having a plasma-exposed bottom electrode

BEOL fat wire level ground rule compatible embedded artificial inte...

Percolation doping of inorganic-organic frameworks for multiple dev...

Mitigating moisture driven degradation of silicon doped chalcogenides

Plasma co-doping to reduce the forming voltage in resistive random...

Resistive random-access memory device with step height difference

Oxide-based resistive memory having a plasma-exposed bottom electrode

Conductive bridging random access memory formed using selective bar...

Non-volatile memory structure and method for low programming voltag...

Stacked access device and resistive memory

Semiconductor memory devices formed using selective barrier metal r...

Layer-by-layer etching of poly-granular metal-based materials for s...

Oxygen-free plasma etching for contact etching of resistive random...

RRAM device with spacer for electrode isolation

Resistive switching memory with replacement metal electrode

High-resistance memory devices

Resistive memory crossbar array with top electrode inner spacers

Vertical array of resistive switching devices having restricted fil...

Gate-all-around field effect transistor using template-assisted-sle...

Oxygen vacancy and filament-loss protection for resistive switching...

Access device and phase change memory combination structure in back...

Multivalent oxide cap for analog switching resistive memory

CBRAM by subtractive etching of metals

Resistive memory crossbar array with a multilayer hardmask

Multivalent oxide cap for analog switching resistive memory

Thin film interconnects with large grains

Resistive switching memory with replacement metal electrode

Interconnect structure including airgaps and substractively etched...

Resistive memory crossbar array with top electrode inner spacers

Cryogenic patterning of magnetic tunnel junctions

Patents Applicationslast 30 patents

PROCESS-INDUCED FORMING OF OXIDE RRAM

LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC

RESISTIVE MEMORY DEVICE AND METHOD OF FORMING

RESISTIVE RANDOM-ACCESS MEMORY DEVICE WITH STEP HEIGHT DIFFERENCE

OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES

IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...

PERCOLATION DOPING OF INORGANIC - ORGANIC FRAMEWORKS FOR MULTIPLE D...

BEOL FAT WIRE LEVEL GROUND RULE COMPATIBLE EMBEDDED ARTIFICIAL INTE...

Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...

CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...

MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES

STACKED ACCESS DEVICE AND RESISTIVE MEMORY

OXIDE-BASED RESISTIVE MEMORY HAVING A PLASMA-EXPOSED BOTTOM ELECTRODE

CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY FORMED USING SELECTIVE BAR...

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR USING TEMPLATE-ASSISTED-SL...

RRAM DEVICE WITH SPACER FOR ELECTRODE ISOLATION

CBRAM BY SUBTRACTIVE ETCHING OF METALS

LAYER-BY-LAYER ETCHING OF POLY-GRANULAR METAL-BASED MATERIALS FOR S...

STACKED ACCESS DEVICE AND RESISTIVE MEMORY

RESISTIVE RANDOM-ACCESS MEMORY DEVICE WITH STEP HEIGHT DIFFERENCE

RESISTIVE MEMORY CROSSBAR ARRAY WITH A MULTILAYER HARDMASK

RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE

RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS

Oxygen-Free Plasma Etching For Contact Etching of Resistive Random...

VERTICAL ARRAY OF RESISTIVE SWITCHING DEVICES HAVING RESTRICTED FIL...

OXYGEN VACANCY AND FILAMENT-LOSS PROTECTION FOR RESISTIVE SWITCHING...

RESISTIVE SWITCHING MEMORY WITH REPLACEMENT METAL ELECTRODE

RESISTIVE MEMORY CROSSBAR ARRAY WITH TOP ELECTRODE INNER SPACERS