Hiroyuki Ogawa

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
System and method for reducing cross-coupling noise between charge...
- Patent number 8,759,894
- Issue date Jun 24, 2014
- Spansion LLC
- Yider Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for memory cell reliability improvement
- Patent number 8,658,496
- Issue date Feb 25, 2014
- Advanced Mirco Devices, Inc.
- Hiroyuki Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for memory cell reliability improvement
- Patent number 8,319,266
- Issue date Nov 27, 2012
- Advanced Micro Devices, Inc.
- Hiroyuki Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a flash memory device with straight word lines
- Patent number 7,851,306
- Issue date Dec 14, 2010
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a pad metal layer and a lower metal lay...
- Patent number 7,632,749
- Issue date Dec 15, 2009
- Spansion LLC
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming straight word lines in a flash memory...
- Patent number 7,488,657
- Issue date Feb 10, 2009
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for low Vss resistance and reduced DIBL in a f...
- Patent number 7,301,193
- Issue date Nov 27, 2007
- Spansion LLC
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for improving the topography of a memory array
- Patent number 7,226,839
- Issue date Jun 5, 2007
- Spansion LLC
- King Wai Kelwin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for reducing interface area of a memory device
- Patent number 7,151,027
- Issue date Dec 19, 2006
- Spansion LLC
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge performance of a silicon structure and effi...
- Patent number 7,019,366
- Issue date Mar 28, 2006
- FASL LLC
- Nian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for forming dual gate structures in a nonvolatile...
- Patent number 6,974,995
- Issue date Dec 13, 2005
- Advanced Micro Devices, Inc.
- Angela Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a memory device having reverse LDD
- Patent number 6,936,515
- Issue date Aug 30, 2005
- FASL LLP
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for tailoring core and periphery cells in a nonvo...
- Patent number 6,808,992
- Issue date Oct 26, 2004
- Spansion LLC
- Kelwin Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die seal for semiconductor device moisture protection
- Patent number 6,566,736
- Issue date May 20, 2003
- Advanced Micro Devices, Inc.
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...
- Publication number 20240072028
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR MEMORY CELL RELIABILITY IMPROVEMENT
- Publication number 20130078795
- Publication date Mar 28, 2013
- SPANSION LLC
- Hiroyuki KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES
- Publication number 20090090953
- Publication date Apr 9, 2009
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for forming straight word lines in a flash memory...
- Publication number 20060286750
- Publication date Dec 21, 2006
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for low Vss resistance and reduced dibl in a f...
- Publication number 20050164450
- Publication date Jul 28, 2005
- FASL, LLC, a limited liability company
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Efficient use of wafer area with device under the pad approach
- Publication number 20050151265
- Publication date Jul 14, 2005
- Nian Yang
- H01 - BASIC ELECTRIC ELEMENTS

Hiroyuki Ogawa

Person

Patents Grantslast 30 patents

System and method for reducing cross-coupling noise between charge...

Etch stop layer for memory cell reliability improvement

Etch stop layer for memory cell reliability improvement

Method for forming a flash memory device with straight word lines

Semiconductor device having a pad metal layer and a lower metal lay...

Method and system for forming straight word lines in a flash memory...

Structure and method for low Vss resistance and reduced DIBL in a f...

Method and system for improving the topography of a memory array

Method and device for reducing interface area of a memory device

Electrostatic discharge performance of a silicon structure and effi...

Method and system for forming dual gate structures in a nonvolatile...

Method for fabricating a memory device having reverse LDD

Method and system for tailoring core and periphery cells in a nonvo...

Die seal for semiconductor device moisture protection

Patents Applicationslast 30 patents

BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...

ETCH STOP LAYER FOR MEMORY CELL RELIABILITY IMPROVEMENT

FLASH MEMORY DEVICE WITH STRAIGHT WORD LINES

Method and system for forming straight word lines in a flash memory...

Structure and method for low Vss resistance and reduced dibl in a f...

Efficient use of wafer area with device under the pad approach