Hiroyuki Takahashi

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Chikuma-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Thermal oxide film formation method for silicon single crystal wafer
- Patent number 9,171,737
- Issue date Oct 27, 2015
- SHIH-ETSU HANDOTAL CO., LTD.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafer producing method, and wafer separating jig
- Patent number 6,998,329
- Issue date Feb 14, 2006
- Shin-Etsu Handotai Co., Ltd.
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER
- Publication number 20130178071
- Publication date Jul 11, 2013
- Shin-Etsu Handotai Co., Ltd.
- Hiroyuki Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Soi wafer producing method, and wafer separating jig
- Publication number 20040180511
- Publication date Sep 16, 2004
- Hiroji Aga
- H01 - BASIC ELECTRIC ELEMENTS