Hiroyuki Tango

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a single crystal semiconductor layer from a non-s...
- Patent number 4,746,803
- Issue date May 24, 1988
- Agency of Industrial Science and Technology
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a single crystal semiconductor layer from a non-s...
- Patent number 4,662,949
- Issue date May 5, 1987
- Director General of Agency of Industrial Science and Technology
- Tomoyasu Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOS p--n Junction device with a thick oxide wiring insulation layer
- Patent number 4,447,823
- Issue date May 8, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective circuit on insulating substrate for protecting MOS integ...
- Patent number 4,288,829
- Issue date Sep 8, 1981
- Agency of Industrial Science and Technology
- Hiroyuki Tango
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER