Hisaki Kato

Person

Nishikasugai-gun, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,867,800
- Issue date Jan 11, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,332,366
- Issue date Feb 19, 2008
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III nitrogen compound
- Patent number 7,138,286
- Issue date Nov 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 7,045,809
- Issue date May 16, 2006
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 7,001,790
- Issue date Feb 21, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,984,536
- Issue date Jan 10, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,881,651
- Issue date Apr 19, 2005
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,853,009
- Issue date Feb 8, 2005
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gallium nitride group compound semicondu...
- Patent number 6,830,992
- Issue date Dec 14, 2004
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices using group III nitride compound semiconductor
- Patent number 6,617,668
- Issue date Sep 9, 2003
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting system with alicyclic epoxy sealing member
- Patent number 6,617,787
- Issue date Sep 9, 2003
- Toyoda Gosei Co., Ltd
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a light-emitting semiconductor device
- Patent number 6,607,595
- Issue date Aug 19, 2003
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,593,599
- Issue date Jul 15, 2003
- Japan Science and Technology Corporation
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride group compound semiconductor
- Patent number 6,472,690
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device
- Patent number 6,472,689
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride compound...
- Patent number 6,423,984
- Issue date Jul 23, 2002
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 6,362,017
- Issue date Mar 26, 2002
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Patent number 6,265,726
- Issue date Jul 24, 2001
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using gallium nitride group com...
- Patent number 6,249,012
- Issue date Jun 19, 2001
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using group III Nitrogen compou...
- Patent number 6,005,258
- Issue date Dec 21, 1999
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using nitrogen-Group III compound
- Patent number 5,905,276
- Issue date May 18, 1999
- Akasaki; Isamu
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,733,796
- Issue date Mar 31, 1998
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having group III nitride compound and enabling...
- Patent number 5,650,641
- Issue date Jul 22, 1997
- Toyoda Gosei Co., Ltd.
- Michinari Sassa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sapphireless group III nitride semiconductor and method for making...
- Patent number 5,620,557
- Issue date Apr 15, 1997
- Toyoda Gosei Co., Ltd
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride compound semiconductor laser diode and method for...
- Patent number 5,604,763
- Issue date Feb 18, 1997
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device using gallium nitride group com...
- Patent number 5,278,433
- Issue date Jan 11, 1994
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate for growing gallium nitride compound-semiconductor device...
- Patent number 5,122,845
- Issue date Jun 16, 1992
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrochromic elements and methods of manufacturing and driving th...
- Patent number 5,007,718
- Issue date Apr 16, 1991
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Jun Minoura
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20140239313
- Publication date Aug 28, 2014
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND
- Publication number 20120217510
- Publication date Aug 30, 2012
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20110101412
- Publication date May 5, 2011
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20080173880
- Publication date Jul 24, 2008
- TOYODA GOSEI
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using group III nitrogen compound
- Publication number 20060118821
- Publication date Jun 8, 2006
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIght-emitting semiconductor device using group III nitrogen compound
- Publication number 20050224834
- Publication date Oct 13, 2005
- Toyoda Gosei Co., Ltd.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing group III nitride compounds semiconductor
- Publication number 20040169192
- Publication date Sep 2, 2004
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20040026705
- Publication date Feb 12, 2004
- Toyoda Gosei Co., Ltd.
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Methods and devices using group III nitride compound semiconductor
- Publication number 20030155586
- Publication date Aug 21, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-emitting semiconductor device using gallium nitride compound...
- Publication number 20020149024
- Publication date Oct 17, 2002
- Hisaki Kato
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing a gallium nitride group compound semicondu...
- Publication number 20020060326
- Publication date May 23, 2002
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting aluminum gallium indium nitride compound semiconduct...
- Publication number 20010019849
- Publication date Sep 6, 2001
- TOTODA GOSEI CO. LTD.
- Katsuhide Manabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting system
- Publication number 20010008484
- Publication date Jul 19, 2001
- Hisaki Kato
- H01 - BASIC ELECTRIC ELEMENTS

Hisaki Kato

Person

Patents Grantslast 30 patents

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using gallium nitride compound...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Method for manufacturing a gallium nitride group compound semicondu...

Methods and devices using group III nitride compound semiconductor

Light-emitting semiconductor device using gallium nitride compound...

Method for manufacturing a gallium nitride group compound semicondu...

Methods and devices using group III nitride compound semiconductor

Light-emitting system with alicyclic epoxy sealing member

Method for producing a light-emitting semiconductor device

Light-emitting semiconductor device using gallium nitride group com...

Gallium nitride group compound semiconductor

Light emitting device

Light-emitting semiconductor device using gallium nitride compound...

Light-emitting semiconductor device using gallium nitride group com...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Light emitting semiconductor device using gallium nitride group com...

Light-emitting semiconductor device using group III Nitrogen compou...

Light emitting semiconductor device using nitrogen-Group III compound

Light-emitting semiconductor device using gallium nitride group com...

Semiconductor device having group III nitride compound and enabling...

Sapphireless group III nitride semiconductor and method for making...

Group III nitride compound semiconductor laser diode and method for...

Light-emitting semiconductor device using gallium nitride group com...

Substrate for growing gallium nitride compound-semiconductor device...

Electrochromic elements and methods of manufacturing and driving th...

Patents Applicationslast 30 patents

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

Light-emitting semiconductor device using group III nitrogen compound

LIght-emitting semiconductor device using group III nitrogen compound

Method for producing group III nitride compounds semiconductor

Light-emitting semiconductor device using gallium nitride compound...

Methods and devices using group III nitride compound semiconductor

Light-emitting semiconductor device using gallium nitride compound...

Method for manufacturing a gallium nitride group compound semicondu...

Light-emitting aluminum gallium indium nitride compound semiconduct...

Light-emitting system