Hisanao Tsuge

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Substrate of emitting device and emitting device using the same
- Patent number 7,638,797
- Issue date Dec 29, 2009
- Samsung Mobile Display Co., Ltd.
- Tomohisa Gotoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical control portion with graded metal dopant to control refract...
- Patent number 7,391,048
- Issue date Jun 24, 2008
- Samsung SDI Co., Ltd.
- Tomohisa Gotoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer a...
- Patent number 7,372,673
- Issue date May 13, 2008
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Light-emitting device substrate with light control layer and light-...
- Patent number 7,180,235
- Issue date Feb 20, 2007
- Samsung SDI Co., Ltd.
- Tomohisa Gotoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,950,290
- Issue date Sep 27, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and method of producing the same
- Patent number 6,914,257
- Issue date Jul 5, 2005
- NEC Corporation
- Ken-ichi Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-resistance effect type composite head and production method...
- Patent number 6,639,766
- Issue date Oct 28, 2003
- NEC Corporation
- Ishiwata Nobuyuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,542,342
- Issue date Apr 1, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WIT...
- Patent number 6,538,861
- Issue date Mar 25, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element, with lower electrode anti-erosion/flakin...
- Patent number 6,493,195
- Issue date Dec 10, 2002
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive element and magnetic head for data writing/reading
- Patent number 6,490,139
- Issue date Dec 3, 2002
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunneling magnetoresistance transducer and method for manufacturing...
- Patent number 6,452,204
- Issue date Sep 17, 2002
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferromagnetic tunnel junction device and method of forming the same
- Patent number 6,392,281
- Issue date May 21, 2002
- NEC Corporation
- Hisanao Tsuge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction elements and their fabrication method
- Patent number 6,341,053
- Issue date Jan 22, 2002
- NEC Corporation
- Masafumi Nakada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect type composite head and production method...
- Patent number 6,333,842
- Issue date Dec 25, 2001
- NEC Corporation
- Ishiwata Nobuyuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and method of forming the same
- Patent number 6,329,078
- Issue date Dec 11, 2001
- NEC Corporation
- Hisanao Tsuge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ferromagnetic tunnel junction device and method of forming the same
- Patent number 6,215,696
- Issue date Apr 10, 2001
- NEC Corporation
- Hisanao Tsuge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating ferromagnetic tunnel junction device
- Patent number 6,174,736
- Issue date Jan 16, 2001
- NEC Corporation
- Yuji Tsukamoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic oxide having a large magnetoresistance effect at room temp...
- Patent number 5,681,500
- Issue date Oct 28, 1997
- NEC Corporation
- Takeshi Obata
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Planarization of dielectric films on integrated circuits
- Patent number 4,983,545
- Issue date Jan 8, 1991
- NEC Corporation
- Hiroshi Gokan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a Josephson tunnel barrier
- Patent number 4,548,834
- Issue date Oct 22, 1985
- NEC Corporation
- Hisanao Tsuge
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE OF EMITTING DEVICE AND EMITTING DEVICE USING THE SAME
- Publication number 20080265245
- Publication date Oct 30, 2008
- Samsung SDI Co., Ltd
- Tomohisa GOTOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20050219772
- Publication date Oct 6, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Light-emitting device substrate and light-emitting device using the...
- Publication number 20050062399
- Publication date Mar 24, 2005
- Tomohisa Gotoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate of emitting device and emitting device using the same
- Publication number 20050051791
- Publication date Mar 10, 2005
- Tomohisa Gotoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20030035256
- Publication date Feb 20, 2003
- NEC Corporation
- Kazuhiko Hayashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistive device and method of producing the same
- Publication number 20030008416
- Publication date Jan 9, 2003
- NEC Corporation
- Ken-Ichi Shimura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Tunneling magnetoresistance transducer and method for manufacturing...
- Publication number 20020164828
- Publication date Nov 7, 2002
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magneto-resistance effect type composite head and production method...
- Publication number 20020027753
- Publication date Mar 7, 2002
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY

Hisanao Tsuge

Person

Patents Grantslast 30 patents

Substrate of emitting device and emitting device using the same

Optical control portion with graded metal dopant to control refract...

Magnetoresistive effect transducer having longitudinal bias layer a...

Light-emitting device substrate with light control layer and light-...

Magnetoresistive effect transducer having longitudinal bias layer d...

Magnetoresistive device and method of producing the same

Magneto-resistance effect type composite head and production method...

Magnetoresistive effect transducer having longitudinal bias layer d...

MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WIT...

Magnetoresistance element, with lower electrode anti-erosion/flakin...

Magneto-resistive element and magnetic head for data writing/reading

Tunneling magnetoresistance transducer and method for manufacturing...

Ferromagnetic tunnel junction device and method of forming the same

Magnetic tunnel junction elements and their fabrication method

Magneto-resistance effect type composite head and production method...

Magnetoresistive element and method of forming the same

Ferromagnetic tunnel junction device and method of forming the same

Method of fabricating ferromagnetic tunnel junction device

Magnetic oxide having a large magnetoresistance effect at room temp...

Planarization of dielectric films on integrated circuits

Method of producing a Josephson tunnel barrier

Patents Applicationslast 30 patents

SUBSTRATE OF EMITTING DEVICE AND EMITTING DEVICE USING THE SAME

Magnetoresistive effect transducer having longitudinal bias layer d...

Light-emitting device substrate and light-emitting device using the...

Substrate of emitting device and emitting device using the same

Magnetoresistive effect transducer having longitudinal bias layer d...

Magnetoresistive device and method of producing the same

Tunneling magnetoresistance transducer and method for manufacturing...

Magneto-resistance effect type composite head and production method...