Hisanori AIKAWA

Person

Yokohama-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic storage device
- Patent number 10,867,650
- Issue date Dec 15, 2020
- TOSHIBA MEMORY CORPORATION
- Hisanori Aikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element
- Patent number 9,076,960
- Issue date Jul 7, 2015
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 9,018,719
- Issue date Apr 28, 2015
- Kabushiki Kaisha Toshiba
- Katsuya Nishiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and method of manufacturing the same
- Patent number 8,884,389
- Issue date Nov 11, 2014
- Kabushiki Kaisha Toshiba
- Masaru Toko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and producing method thereof
- Patent number 8,878,321
- Issue date Nov 4, 2014
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element having an adjustment layer for reducing a l...
- Patent number 8,634,238
- Issue date Jan 21, 2014
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory including a magnetoresistive element
- Patent number 8,530,987
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 8,531,875
- Issue date Sep 10, 2013
- Kabushiki Kaisha Toshiba
- Satoshi Yanagi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect element and magnetic random access memory
- Patent number 8,378,437
- Issue date Feb 19, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive effect device and magnetic memory
- Patent number 8,223,533
- Issue date Jul 17, 2012
- Kabushiki Kaisha Toshiba
- Jyunichi Ozeki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,173,447
- Issue date May 8, 2012
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive device and magnetic random access memory
- Patent number 8,169,817
- Issue date May 1, 2012
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin memory and spin transistor
- Patent number 8,139,403
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Grant
Data writing method for magnetoresistive effect element and magneti...
- Patent number 8,120,948
- Issue date Feb 21, 2012
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 7,894,246
- Issue date Feb 22, 2011
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory
- Patent number 7,848,136
- Issue date Dec 7, 2010
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM and method of manufacturing the same
- Patent number 7,564,109
- Issue date Jul 21, 2009
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 7,277,318
- Issue date Oct 2, 2007
- Kabushiki Kaisha Toshiba
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device having yoke layer on write interconnection a...
- Patent number 7,200,034
- Issue date Apr 3, 2007
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory device having thermal agitation prope...
- Patent number 7,190,613
- Issue date Mar 13, 2007
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 7,064,402
- Issue date Jun 20, 2006
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 6,984,865
- Issue date Jan 10, 2006
- Kabushiki Kaisha Toshiba
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic recording medium and magnetic recording/reproducing appara...
- Patent number 6,972,923
- Issue date Dec 6, 2005
- Kabushiki Kaisha Toshiba
- Junichi Akiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 6,947,314
- Issue date Sep 20, 2005
- Kabushiki Kaisha Toshiba
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 6,927,468
- Issue date Aug 9, 2005
- Kabushiki Kaisha Toshiba
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory device having high-heat disturbance r...
- Patent number 6,909,130
- Issue date Jun 21, 2005
- Kabushiki Kaisha Toshiba
- Hiroaki Yoda
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC STORAGE DEVICE
- Publication number 20200302985
- Publication date Sep 24, 2020
- Toshiba Memory Corporation
- Hisanori AIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT
- Publication number 20140264669
- Publication date Sep 18, 2014
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20130181305
- Publication date Jul 18, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099338
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- Publication number 20130099337
- Publication date Apr 25, 2013
- Kabushiki Kaisha Toshiba
- Masahiko Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130069186
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Masaru TOKO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF
- Publication number 20130069184
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Hisanori AIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20130001714
- Publication date Jan 3, 2013
- Kabushiki Kaisha Toshiba
- Katsuya Nishiyama
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120241884
- Publication date Sep 27, 2012
- Hisanori AIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY
- Publication number 20120230091
- Publication date Sep 13, 2012
- Satoshi YANAGI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20110254114
- Publication date Oct 20, 2011
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
SPIN MEMORY AND SPIN TRANSISTOR
- Publication number 20110228596
- Publication date Sep 22, 2011
- Kabushiki Kaisha Toshiba
- Tomoaki Inokuchi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100315864
- Publication date Dec 16, 2010
- KABUSHIKI KAISHA TOSHIBA
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20100238717
- Publication date Sep 23, 2010
- Kabushiki Kaisha Toshiba
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY
- Publication number 20100080050
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Jyunichi OZEKI
- G11 - INFORMATION STORAGE
Information Patent Application
DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNET...
- Publication number 20100073998
- Publication date Mar 25, 2010
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090224342
- Publication date Sep 10, 2009
- Masahiko NAKAYAMA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20080253039
- Publication date Oct 16, 2008
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC MEMORY
- Publication number 20080204944
- Publication date Aug 28, 2008
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20080180859
- Publication date Jul 31, 2008
- Kabushiki Kaisha Toshiba
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device having yoke layer on write interconnection a...
- Publication number 20060132984
- Publication date Jun 22, 2006
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory and method of manufacturing the same
- Publication number 20050281079
- Publication date Dec 22, 2005
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM and method of manufacturing the same
- Publication number 20050275000
- Publication date Dec 15, 2005
- Takeshi Kajiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetic random access memory
- Publication number 20050259464
- Publication date Nov 24, 2005
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20050199925
- Publication date Sep 15, 2005
- Takeshi Kajiyama
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory
- Publication number 20050141148
- Publication date Jun 30, 2005
- Kabushiki Kaisha Toshiba
- Hisanori Aikawa
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory device having thermal agitation prope...
- Publication number 20050018478
- Publication date Jan 27, 2005
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory device having high-heat disturbance r...
- Publication number 20040195602
- Publication date Oct 7, 2004
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory and method of manufacturing the same
- Publication number 20040179393
- Publication date Sep 16, 2004
- Hiroaki Yoda
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20040100818
- Publication date May 27, 2004
- Hiroaki Yoda
- G11 - INFORMATION STORAGE

Hisanori AIKAWA

Person

Patents Grantslast 30 patents

Magnetic storage device

Magnetic memory element

Magnetoresistive element and magnetic memory

Magnetoresistive element and method of manufacturing the same

Magnetoresistive element and producing method thereof

Magnetic memory element having an adjustment layer for reducing a l...

Magnetic memory including a magnetoresistive element

Magnetic memory

Magnetoresistive effect element and magnetic random access memory

Magnetoresistive effect device and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive device and magnetic random access memory

Spin memory and spin transistor

Data writing method for magnetoresistive effect element and magneti...

Magnetoresistive element and magnetic memory

Magnetic memory

MRAM and method of manufacturing the same

Magnetic random access memory and method of manufacturing the same

Magnetic memory device having yoke layer on write interconnection a...

Magnetic random access memory device having thermal agitation prope...

Magnetic random access memory

Magnetic random access memory

Magnetic recording medium and magnetic recording/reproducing appara...

Magnetic random access memory and method of manufacturing the same

Magnetic random access memory

Magnetic random access memory device having high-heat disturbance r...

Patents Applicationslast 30 patents

MAGNETIC STORAGE DEVICE

MAGNETIC MEMORY ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND PRODUCING METHOD THEREOF

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY

MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

SPIN MEMORY AND SPIN TRANSISTOR

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE EFFECT DEVICE AND MAGNETIC MEMORY

DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNET...

MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Magnetic memory device having yoke layer on write interconnection a...

Magnetic random access memory and method of manufacturing the same

MRAM and method of manufacturing the same

Magnetic random access memory

Magnetic random access memory

Magnetic memory

Magnetic random access memory device having thermal agitation prope...

Magnetic random access memory device having high-heat disturbance r...

Magnetic random access memory and method of manufacturing the same

Magnetic random access memory