Hisanori Yamane

Person

Sendai-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Phosphor, light-emitting device, illumination device and image disp...
- Patent number 10,011,768
- Issue date Jul 3, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Fumitaka Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 9,869,033
- Issue date Jan 16, 2018
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Boride having chemical composition Na—Si—B, and polycrystalline rea...
- Patent number 9,255,010
- Issue date Feb 9, 2016
- TOHOKU UNIVERSITY
- Haruhiko Morito
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Scintillator for neutrons and neutron detector
- Patent number 8,809,797
- Issue date Aug 19, 2014
- Tokuyama Corporation
- Hisanori Yamane
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Crystal growth apparatus
- Patent number 8,623,138
- Issue date Jan 7, 2014
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 8,591,647
- Issue date Nov 26, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 8,562,737
- Issue date Oct 22, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods of growing a group III nitride crystal
- Patent number 7,828,896
- Issue date Nov 9, 2010
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method
- Patent number 7,531,038
- Issue date May 12, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,508,003
- Issue date Mar 24, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of growing a group III nitride crystal
- Patent number 7,261,775
- Issue date Aug 28, 2007
- Ricoh Company, Ltd.
- Hirokazu Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,250,640
- Issue date Jul 31, 2007
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 7,001,457
- Issue date Feb 21, 2006
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 6,949,140
- Issue date Sep 27, 2005
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 6,780,239
- Issue date Aug 24, 2004
- Ricoh Company, Ltd.
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 6,592,663
- Issue date Jul 15, 2003
- Ricoh Company Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature method of preparing GaN single crystals
- Patent number 5,868,837
- Issue date Feb 9, 1999
- Cornell Research Foundation, Inc.
- Francis J. DiSalvo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition of dense and transparent zirconia films
- Patent number 5,145,720
- Issue date Sep 8, 1992
- Sumitomo Metal Mining Co., Ltd.
- Toshio Hirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing josephson junctions
- Patent number 4,985,117
- Issue date Jan 15, 1991
- Kabushiki Kaisha Riken
- Hideyuki Kurosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zirconia film and process for preparing it
- Patent number 4,920,014
- Issue date Apr 24, 1990
- Sumitomo Metal Mining Co., Ltd.
- Toshio Hirai
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE AND IMAGE DISP...
- Publication number 20170204328
- Publication date Jul 20, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Fumitaka YOSHIMURA
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20150152568
- Publication date Jun 4, 2015
- RICOH COMPANY, LTD.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20140044970
- Publication date Feb 13, 2014
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20130330264
- Publication date Dec 12, 2013
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SCINTILLATOR FOR NEUTRONS AND NEUTRON DETECTOR
- Publication number 20130264482
- Publication date Oct 10, 2013
- Hisanori Yamane
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
BORIDE HAVING CHEMICAL COMPOSITION Na-Si-B, AND POLYCRYSTALLINE REA...
- Publication number 20130266499
- Publication date Oct 10, 2013
- Haruhiko Morito
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...
- Publication number 20110012235
- Publication date Jan 20, 2011
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20090173274
- Publication date Jul 9, 2009
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20090120354
- Publication date May 14, 2009
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20080282969
- Publication date Nov 20, 2008
- Ricoh Company, Ltd,
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing group III nitride crystal, group III nitride crys...
- Publication number 20070266928
- Publication date Nov 22, 2007
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Publication number 20070012239
- Publication date Jan 18, 2007
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20060130739
- Publication date Jun 22, 2006
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20050026318
- Publication date Feb 3, 2005
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing group III nitride crystal, group III nitride crys...
- Publication number 20040226503
- Publication date Nov 18, 2004
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Publication number 20040031437
- Publication date Feb 19, 2004
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20030164138
- Publication date Sep 4, 2003
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20020175338
- Publication date Nov 28, 2002
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20020046695
- Publication date Apr 25, 2002
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY

Hisanori Yamane

Person

Patents Grantslast 30 patents

Phosphor, light-emitting device, illumination device and image disp...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Boride having chemical composition Na—Si—B, and polycrystalline rea...

Scintillator for neutrons and neutron detector

Crystal growth apparatus

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Methods of growing a group III nitride crystal

Crystal growth method

Production of a GaN bulk crystal substrate and a semiconductor devi...

Methods of growing a group III nitride crystal

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Low temperature method of preparing GaN single crystals

Chemical vapor deposition of dense and transparent zirconia films

Method of manufacturing josephson junctions

Zirconia film and process for preparing it

Patents Applicationslast 30 patents

PHOSPHOR, LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE AND IMAGE DISP...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

SCINTILLATOR FOR NEUTRONS AND NEUTRON DETECTOR

BORIDE HAVING CHEMICAL COMPOSITION Na-Si-B, AND POLYCRYSTALLINE REA...

METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

Method of growing group III nitride crystal, group III nitride crys...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Method of growing group III nitride crystal, group III nitride crys...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...