Hisao Hayashi

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Atsugi, JA

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semi-insulating silicon layer
- Patent number 4,084,986
- Issue date Apr 18, 1978
- Sony Corporation
- Teruaki Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with two passivating layers
- Patent number 4,063,275
- Issue date Dec 13, 1977
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing multiple polycrystalline silicon masks for diffusion and...
- Patent number 4,062,707
- Issue date Dec 13, 1977
- Sony Corporation
- Hidenobu Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a hetero junction
- Patent number 4,062,034
- Issue date Dec 6, 1977
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,014,037
- Issue date Mar 22, 1977
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high voltage breakdown resistance
- Patent number 4,003,072
- Issue date Jan 11, 1977
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a high breakdown voltage characteristic
- Patent number 3,971,061
- Issue date Jul 20, 1976
- Sony Corporation
- Takeshi Matsushita
- H01 - BASIC ELECTRIC ELEMENTS