Hisao Matsutera

Person

Minato-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer a...
- Patent number 7,372,673
- Issue date May 13, 2008
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 7,126,201
- Issue date Oct 24, 2006
- NEC Corporation
- Hisao Matsutera
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory
- Patent number 7,099,184
- Issue date Aug 29, 2006
- NEC Corporation
- Tadahiko Sugibayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory, and production method therefor
- Patent number 7,068,536
- Issue date Jun 27, 2006
- NEC Corporation
- Hisao Matsutera
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,950,290
- Issue date Sep 27, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect type composite head and production method...
- Patent number 6,639,766
- Issue date Oct 28, 2003
- NEC Corporation
- Ishiwata Nobuyuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,542,342
- Issue date Apr 1, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive element and magnetic head for data writing/reading
- Patent number 6,490,139
- Issue date Dec 3, 2002
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction elements and their fabrication method
- Patent number 6,341,053
- Issue date Jan 22, 2002
- NEC Corporation
- Masafumi Nakada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magneto-resistance effect type composite head and production method...
- Patent number 6,333,842
- Issue date Dec 25, 2001
- NEC Corporation
- Ishiwata Nobuyuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating ferromagnetic tunnel junction device
- Patent number 6,174,736
- Issue date Jan 16, 2001
- NEC Corporation
- Yuji Tsukamoto
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Magnetic random access memory
- Publication number 20060098477
- Publication date May 11, 2006
- Tadahiko Sugibayashi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20050242407
- Publication date Nov 3, 2005
- Hisao Matsutera
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20050219772
- Publication date Oct 6, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Magnetic random access memory, and production method therefor
- Publication number 20050002229
- Publication date Jan 6, 2005
- Hisao Matsutera
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20030035256
- Publication date Feb 20, 2003
- NEC Corporation
- Kazuhiko Hayashi
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magneto-resistance effect type composite head and production method...
- Publication number 20020027753
- Publication date Mar 7, 2002
- NEC Corporation
- Nobuyuki Ishiwata
- B82 - NANO-TECHNOLOGY

Hisao Matsutera

Person

Patents Grantslast 30 patents

Magnetoresistive effect transducer having longitudinal bias layer a...

Magnetic random access memory

Magnetic random access memory

Magnetic random access memory, and production method therefor

Magnetoresistive effect transducer having longitudinal bias layer d...

Magneto-resistance effect type composite head and production method...

Magnetoresistive effect transducer having longitudinal bias layer d...

Magneto-resistive element and magnetic head for data writing/reading

Magnetic tunnel junction elements and their fabrication method

Magneto-resistance effect type composite head and production method...

Method of fabricating ferromagnetic tunnel junction device

Patents Applicationslast 30 patents

Magnetic random access memory

Magnetic random access memory

Magnetoresistive effect transducer having longitudinal bias layer d...

Magnetic random access memory, and production method therefor

Magnetoresistive effect transducer having longitudinal bias layer d...

Magneto-resistance effect type composite head and production method...