Hisashi Ariyoshi

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 6,008,509
- Issue date Dec 28, 1999
- Murata Manufacturing Co., Ltd.
- Makoto Inai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric resonator including a plurality of solder bumps and meth...
- Patent number 5,517,162
- Issue date May 14, 1996
- Murata Manufacturing Co., Ltd.
- Hisashi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode with ohmic portion
- Patent number 5,306,943
- Issue date Apr 26, 1994
- Murata Manufacturing Co., Ltd.
- Hisashi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for integrated resonator
- Patent number 4,890,370
- Issue date Jan 2, 1990
- Murata Manufacturing Co., Ltd.
- Susumu Fukuda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Producing a compound semiconductor device on an oxygen implanted si...
- Patent number 4,845,044
- Issue date Jul 4, 1989
- Murata Manufacturing Co., Ltd.
- Hisashi Ariyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having buried insulating layer
- Patent number 4,241,359
- Issue date Dec 23, 1980
- Nippon Telegraph & Telephone Public Corporation
- Katsutoshi Izumi
- H01 - BASIC ELECTRIC ELEMENTS