Hisashi Nakayama

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a group III nitride semiconductor layer
- Patent number 7,834,366
- Issue date Nov 16, 2010
- Panasonic Corporation
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxidized regions and method for fabricati...
- Patent number 7,795,630
- Issue date Sep 14, 2010
- Panasonic Corporation
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor thin film
- Patent number 7,713,812
- Issue date May 11, 2010
- Panasonic Corporation
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and fabrication method therefor
- Patent number 7,711,023
- Issue date May 4, 2010
- Panasonic Corporation
- Yasuhiro Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and method for fabricating the same
- Patent number 7,704,759
- Issue date Apr 27, 2010
- Panasonic Corporation
- Toru Takayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and method for fabricating the same
- Patent number 7,693,202
- Issue date Apr 6, 2010
- Panasonic Corporation
- Satoshi Murasawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor laser device and method for fabricating the same
- Patent number 7,433,380
- Issue date Oct 7, 2008
- Matsushita Electric Industrial Co., Ltd.
- Toru Takayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,091,524
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor thin film
- Patent number 7,008,839
- Issue date Mar 7, 2006
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 6,636,541
- Issue date Oct 21, 2003
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Laser Device and Method for Fabricating the Same
- Publication number 20090086780
- Publication date Apr 2, 2009
- SYSTRA
- Satoshi Murasawa
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090017570
- Publication date Jan 15, 2009
- Matsushita Electric Industrial Co., Ltd.
- Toru TAKAYAMA
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device and fabrication method therefor
- Publication number 20070223550
- Publication date Sep 27, 2007
- Yasuhiro Fujimoto
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor laser device and method for fabricating the same
- Publication number 20070147457
- Publication date Jun 28, 2007
- Toru Takayama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060255350
- Publication date Nov 16, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor thin film
- Publication number 20060121695
- Publication date Jun 8, 2006
- Matsushita Electric Industrial Co., Ltd.
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050029531
- Publication date Feb 10, 2005
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040188693
- Publication date Sep 30, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hisashi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing semiconductor thin film
- Publication number 20030186475
- Publication date Oct 2, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS

Hisashi Nakayama

Person

Patents Grantslast 30 patents

Semiconductor device having a group III nitride semiconductor layer

Semiconductor device with oxidized regions and method for fabricati...

Method for manufacturing semiconductor thin film

Semiconductor laser device and fabrication method therefor

Semiconductor laser device and method for fabricating the same

Semiconductor laser device and method for fabricating the same

Semiconductor laser device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for manufacturing semiconductor thin film

Semiconductor laser device

Patents Applicationslast 30 patents

Semiconductor Laser Device and Method for Fabricating the Same

SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor laser device and fabrication method therefor

Semiconductor laser device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for manufacturing semiconductor thin film

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for manufacturing semiconductor thin film