Hisashi Yamada

Person

Tsukuba, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor wafer and method of inspecting semiconductor wafer
- Patent number 10,763,332
- Issue date Sep 1, 2020
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar nonpolar group-III nitride films grown on miscut substrates
- Patent number 9,828,695
- Issue date Nov 28, 2017
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Planar nonpolar group-III nitride films grown on miscut substrates
- Patent number 9,340,899
- Issue date May 17, 2016
- The Regents of the University of California
- Asako Hirai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor substrate, field-effect transistor, integrated circui...
- Patent number 9,112,035
- Issue date Aug 18, 2015
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer, field-effect transistor, method of producing s...
- Patent number 8,901,656
- Issue date Dec 2, 2014
- Sumitomo Chemical Company, Limited
- Takeshi Aoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar nonpolar group-III nitride films grown on miscut substrates
- Patent number 8,791,000
- Issue date Jul 29, 2014
- The Regents of the University of California
- Asako Hirai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing semiconductor substrate, semiconductor substra...
- Patent number 8,709,904
- Issue date Apr 29, 2014
- Sumitomo Chemical Company, Limited
- Tomoyuki Takada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar nonpolar group-III nitride films grown on miscut substrates
- Patent number 8,691,671
- Issue date Apr 8, 2014
- The Regents of the University of California
- Asako Hirai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nonpolar III-nitride light emitting diodes with long wavelength emi...
- Patent number 8,642,993
- Issue date Feb 4, 2014
- The Regents of the University of California
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of optical polarization of nitride light-emitting diode...
- Patent number 8,278,128
- Issue date Oct 2, 2012
- The Regents of the University of California
- Hisashi Masui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar nonpolar m-plane group III nitride films grown on miscut sub...
- Patent number 8,158,497
- Issue date Apr 17, 2012
- The Regents of the University of California
- Asako Hirai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Enhancement of optical polarization of nitride light-emitting diode...
- Patent number 8,044,417
- Issue date Oct 25, 2011
- The Regents of the University of California
- Hisashi Masui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film crystal wafer having pn junction and method for fabricati...
- Patent number 7,923,752
- Issue date Apr 12, 2011
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonpolar III-nitride light emitting diodes with long wavelength emi...
- Patent number 7,847,280
- Issue date Dec 7, 2010
- The Regents of the University of California
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing compound semiconductor wafer and compound semi...
- Patent number 7,576,352
- Issue date Aug 18, 2009
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor epitaxial substrate
- Patent number 7,550,786
- Issue date Jun 23, 2009
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing compound semiconductor wafer and compound...
- Patent number 7,208,387
- Issue date Apr 24, 2007
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction structure with a charge compensation layer formed be...
- Patent number 6,744,078
- Issue date Jun 1, 2004
- Sumitomo Chemical Company, Limited
- Noboru Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20170327969
- Publication date Nov 16, 2017
- The Regents of the University of California
- Kenji Iso
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR WAFER AND METHOD OF INSPECTING SEMICONDUCTOR WAFER
- Publication number 20170236906
- Publication date Aug 17, 2017
- Sumitomo Chemical Company, Limited
- Hisashi YAMADA
- G01 - MEASURING TESTING
Information Patent Application
PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20160230312
- Publication date Aug 11, 2016
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Application
PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20140291694
- Publication date Oct 2, 2014
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER
- Publication number 20140203408
- Publication date Jul 24, 2014
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Tomoyuki TAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20140138679
- Publication date May 22, 2014
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...
- Publication number 20140091398
- Publication date Apr 3, 2014
- Sumitomo Chemical Company, Limited
- Masahiko HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...
- Publication number 20140091392
- Publication date Apr 3, 2014
- Sumitomo Chemical Company, Limited
- Tomoyuki TAKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...
- Publication number 20140091393
- Publication date Apr 3, 2014
- Sumitomo Chemical Company, Limited
- Masahiko HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING S...
- Publication number 20130341721
- Publication date Dec 26, 2013
- Sumitomo Chemical Company, Limited
- Takeshi AOKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, INTEGRATED CIRCUI...
- Publication number 20120205747
- Publication date Aug 16, 2012
- THE UNIVERSITY OF TOKYO
- Hisashi YAMADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20120175739
- Publication date Jul 12, 2012
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Application
ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...
- Publication number 20120049158
- Publication date Mar 1, 2012
- The Regents of the University of California
- Hisashi Masui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
- Publication number 20110237054
- Publication date Sep 29, 2011
- The Regents of the University of California
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, S...
- Publication number 20110233689
- Publication date Sep 29, 2011
- SUMITOMO CHEMICAL COMPANY, LIMITED
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...
- Publication number 20110227042
- Publication date Sep 22, 2011
- SUMITOMO CHEMICAL COMPANY, LIMITED
- Tomoyuki Takada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...
- Publication number 20110227199
- Publication date Sep 22, 2011
- SUMITOMO CHEMICAL COMPANY, LIMITED
- Masahiko Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMI...
- Publication number 20110057166
- Publication date Mar 10, 2011
- The Regents of the University of California
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...
- Publication number 20100052008
- Publication date Mar 4, 2010
- The Regents of the University of California
- Hisashi Masui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...
- Publication number 20090194761
- Publication date Aug 6, 2009
- The Regents of the University of California
- Hisashi Masui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMI...
- Publication number 20090039339
- Publication date Feb 12, 2009
- The Regents of the University of California
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUB...
- Publication number 20090039356
- Publication date Feb 12, 2009
- The Regents of the University of California
- Kenji Iso
- C30 - CRYSTAL GROWTH
Information Patent Application
PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUB...
- Publication number 20080308907
- Publication date Dec 18, 2008
- The Regents of the University of California
- Asako Hirai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR WAFER AND COMPOUND SEMI...
- Publication number 20070170466
- Publication date Jul 26, 2007
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor epitaxial substrate
- Publication number 20060255367
- Publication date Nov 16, 2006
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor device and process for producing the same
- Publication number 20060131607
- Publication date Jun 22, 2006
- Sumitomo Chemical Company, Limited
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing compound semiconductor wafer and compound...
- Publication number 20060001044
- Publication date Jan 5, 2006
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film crystal wafer with pn-junction and its manufacturing process
- Publication number 20030006427
- Publication date Jan 9, 2003
- Sumitomo Chemical Company, Limited
- Noboru Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin-film crystal wafer having pn junction and method for fabricati...
- Publication number 20020145153
- Publication date Oct 10, 2002
- Hisashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS

Hisashi Yamada

Person

Patents Grantslast 30 patents

Semiconductor wafer and method of inspecting semiconductor wafer

Planar nonpolar group-III nitride films grown on miscut substrates

Planar nonpolar group-III nitride films grown on miscut substrates

Semiconductor substrate, field-effect transistor, integrated circui...

Semiconductor wafer, field-effect transistor, method of producing s...

Planar nonpolar group-III nitride films grown on miscut substrates

Method for producing semiconductor substrate, semiconductor substra...

Planar nonpolar group-III nitride films grown on miscut substrates

Nonpolar III-nitride light emitting diodes with long wavelength emi...

Enhancement of optical polarization of nitride light-emitting diode...

Planar nonpolar m-plane group III nitride films grown on miscut sub...

Enhancement of optical polarization of nitride light-emitting diode...

Thin-film crystal wafer having pn junction and method for fabricati...

Nonpolar III-nitride light emitting diodes with long wavelength emi...

Method for producing compound semiconductor wafer and compound semi...

Compound semiconductor epitaxial substrate

Method for manufacturing compound semiconductor wafer and compound...

Heterojunction structure with a charge compensation layer formed be...

Patents Applicationslast 30 patents

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

SEMICONDUCTOR WAFER AND METHOD OF INSPECTING SEMICONDUCTOR WAFER

PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER

PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEM...

SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING S...

SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, INTEGRATED CIRCUI...

PLANAR NONPOLAR GROUP-III NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...

PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES

SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, S...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...

NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMI...

ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...

ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODE...

NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMI...

PLANAR NONPOLAR M-PLANE GROUP III-NITRIDE FILMS GROWN ON MISCUT SUB...

PLANAR NONPOLAR m-PLANE GROUP III NITRIDE FILMS GROWN ON MISCUT SUB...

METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR WAFER AND COMPOUND SEMI...

Compound semiconductor epitaxial substrate

Compound semiconductor device and process for producing the same

Method for manufacturing compound semiconductor wafer and compound...

Thin film crystal wafer with pn-junction and its manufacturing process

Thin-film crystal wafer having pn junction and method for fabricati...