Hisatsugu Kurita

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Niigata, JP

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Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method for strained silicon wafer
- Patent number 7,247,583
- Issue date Jul 24, 2007
- Toshiba Ceramics Co., Ltd.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer cleaning method
- Patent number 7,226,513
- Issue date Jun 5, 2007
- Toshiba Ceramics Co., Ltd.
- Hisatsugu Kurita
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Manufacturing method for a silicon substrate having strained layer
- Patent number 7,060,597
- Issue date Jun 13, 2006
- Toshiba Ceramics Co., Ltd.
- Hisatsugu Kurita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Manufacturing method for strained silicon wafer
- Publication number 20050170664
- Publication date Aug 4, 2005
- TOSHIBA CERAMICS CO., LTD.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for a silicon substrate having strained layer
- Publication number 20040235274
- Publication date Nov 25, 2004
- TOSHIBA CERAMICS CO., LTD.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer cleaning method
- Publication number 20040045580
- Publication date Mar 11, 2004
- TOSHIBA CERAMICS CO.,LTD.
- Hisatsugu Kurita
- B08 - CLEANING