Hitoshi Haematsu

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Yamanashi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,049,179
- Issue date May 23, 2006
- Fujitsu Quantum Devices Limited
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,998,679
- Issue date Feb 14, 2006
- Fujitsu Quantum Devices Limited
- Kazutaka Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,664,624
- Issue date Dec 16, 2003
- Fujitsu Quantum Devices Limited
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET whose source electrode overhangs gate electrode and its manufac...
- Patent number 6,504,190
- Issue date Jan 7, 2003
- Fujitsu Quantum Devices Limited
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040048463
- Publication date Mar 11, 2004
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20030183886
- Publication date Oct 2, 2003
- FUJITSU QUANTUM DEVICES LIMITED
- Kazutaka Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020180005
- Publication date Dec 5, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fet whose source electrode overhangs gate electrode and its manufac...
- Publication number 20020038894
- Publication date Apr 4, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Hitoshi Haematsu
- H01 - BASIC ELECTRIC ELEMENTS