Hitoshi Kasai

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 9,153,742
- Issue date Oct 6, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 8,574,364
- Issue date Nov 5, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 8,143,140
- Issue date Mar 27, 2012
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor light emitting device and method for forming...
- Patent number 7,973,322
- Issue date Jul 5, 2011
- Sumitomo Electric Industries, Ltd
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Group-III nitride light-emitting device
- Patent number 7,968,864
- Issue date Jun 28, 2011
- Sumitomo Electric Industries, Ltd
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting element and substrate used in formatio...
- Patent number 7,915,635
- Issue date Mar 29, 2011
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,858,502
- Issue date Dec 28, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN crystal substrate
- Patent number 7,825,409
- Issue date Nov 2, 2010
- Sumitomo Electric Industries, Ltd.
- Shunsuke Fujita
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
GaN substrate, substrate with epitaxial layer, semiconductor device...
- Patent number 7,816,238
- Issue date Oct 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 7,728,348
- Issue date Jun 1, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,589,000
- Issue date Sep 15, 2009
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing a single crystal gallium nitride substrate and...
- Patent number 6,468,882
- Issue date Oct 22, 2002
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130292737
- Publication date Nov 7, 2013
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20120034149
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20110065265
- Publication date Mar 17, 2011
- Sumitomo Electric Industries, Ltd.
- Hitoshi KASAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...
- Publication number 20100210089
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING...
- Publication number 20100059759
- Publication date Mar 11, 2010
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Application
Nitride Semiconductor Light-Emitting Device and Nitride Semiconduct...
- Publication number 20100032644
- Publication date Feb 11, 2010
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20100009526
- Publication date Jan 14, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURIN...
- Publication number 20090212277
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Katsushi Akita
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...
- Publication number 20080308906
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Hideki OSADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Dev...
- Publication number 20080308815
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...
- Publication number 20080296610
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi AKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
- Publication number 20080299694
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Katsushi AKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-Crystal GaN Substrate
- Publication number 20080219910
- Publication date Sep 11, 2008
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate having thin film of GaN joined thereon and method of fabr...
- Publication number 20080169483
- Publication date Jul 17, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing gallium nitride crystal and gallium nitride subst...
- Publication number 20070280872
- Publication date Dec 6, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN crystal substrate
- Publication number 20070228400
- Publication date Oct 4, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Shunsuke Fujita
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication method and fabrication apparatus of group III nitride c...
- Publication number 20070148920
- Publication date Jun 28, 2007
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Single-Crystal GaN Substrate, and Single-Cr...
- Publication number 20050208687
- Publication date Sep 22, 2005
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a single crystal gallium nitride substrate and...
- Publication number 20020028564
- Publication date Mar 7, 2002
- Kensaku Motoki
- C30 - CRYSTAL GROWTH

Hitoshi Kasai

Person

Patents Grantslast 30 patents

GaN-crystal free-standing substrate and method for producing the same

GaN-crystal free-standing substrate and method for producing the same

Fabrication method and fabrication apparatus of group III nitride c...

Substrate having thin film of GaN joined thereon and method of fabr...

Nitride semiconductor light emitting device and method for forming...

Group-III nitride light-emitting device

Semiconductor light-emitting element and substrate used in formatio...

Fabrication method and fabrication apparatus of group III nitride c...

GaN crystal substrate

GaN substrate, substrate with epitaxial layer, semiconductor device...

Substrate having thin film of GaN joined thereon and method of fabr...

Fabrication method and fabrication apparatus of group III nitride c...

Method of producing a single crystal gallium nitride substrate and...

Patents Applicationslast 30 patents

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FORMING...

Nitride Semiconductor Light-Emitting Device and Nitride Semiconduct...

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURIN...

GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...

GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Dev...

SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATIO...

METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

Single-Crystal GaN Substrate

Substrate having thin film of GaN joined thereon and method of fabr...

Method of growing gallium nitride crystal and gallium nitride subst...

GaN crystal substrate

Fabrication method and fabrication apparatus of group III nitride c...

Method of Manufacturing Single-Crystal GaN Substrate, and Single-Cr...

Method of producing a single crystal gallium nitride substrate and...