Hitoshi Sasaki

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Tukuba-shi, Ibaragi-ken, JP

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Patents Grantslast 30 patents

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Growth of silicon crystal from melt having extraordinary eddy flows...
- Patent number 5,704,974
- Issue date Jan 6, 1998
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal having uniform impurity distributi...
- Patent number 5,700,320
- Issue date Dec 23, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal
- Patent number 5,683,504
- Issue date Nov 4, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of oxygen concentration in single crystal pulled up from me...
- Patent number 5,524,574
- Issue date Jun 11, 1996
- Research Development Corporation of Japan
- Xingming Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Pull method for growth of single crystal using density detector and...
- Patent number 5,476,064
- Issue date Dec 19, 1995
- Research Development Corporation of Japan
- Hitoshi Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Measuring device for density of liquid or high-temperature melt wit...
- Patent number 5,410,914
- Issue date May 2, 1995
- Research Development Corporation of Japan
- Hitoshi Sasaki
- G01 - MEASURING TESTING