Hitoshi Yamaguchi

Follow

Person

Nagoya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a high breakdown voltage
- Patent number 5,874,768
- Issue date Feb 23, 1999
- Nippondenso Co., Ltd.
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a silicon-on-insulator structure
- Patent number 5,777,365
- Issue date Jul 7, 1998
- Nippondenso Co., Ltd.
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,466,303
- Issue date Nov 14, 1995
- Nippondenso Co., Ltd.
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS