Hochul Lee

Person

Los Angeles, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory with double redundancy
- Patent number 12,094,528
- Issue date Sep 17, 2024
- QUALCOMM Incorporated
- Dhvani Sheth
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with a sense amplifier isolation scheme for enhancing memory...
- Patent number 11,894,050
- Issue date Feb 6, 2024
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with reduced capacitance at a sense amplifier
- Patent number 11,854,609
- Issue date Dec 26, 2023
- QUALCOMM Incorporated
- Arun Babu Pallerla
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with built-in flexible double redundancy
- Patent number 11,640,835
- Issue date May 2, 2023
- QUALCOMM Incorporated
- Anil Chowdary Kota
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with positively boosted write multiplexer
- Patent number 11,568,904
- Issue date Jan 31, 2023
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for driving wordlines using set-reset latches
- Patent number 11,250,895
- Issue date Feb 15, 2022
- QUALCOMM Incorporated
- Dhvani Sheth
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable (OTP) memory cell circuits employing a diode...
- Patent number 11,250,924
- Issue date Feb 15, 2022
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable (OTP) memory cell circuits employing a diode...
- Patent number 11,222,706
- Issue date Jan 11, 2022
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Bitcell for data redundancy
- Patent number 11,177,010
- Issue date Nov 16, 2021
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with built-in flexible double redundancy
- Patent number 11,164,610
- Issue date Nov 2, 2021
- QUALCOMM Incorporated
- Anil Chowdary Kota
- G11 - INFORMATION STORAGE
Information Patent Grant
Testing one-time programmable (OTP) memory with data input capture...
- Patent number 11,152,038
- Issue date Oct 19, 2021
- QUALCOMM Incorporated
- Anil Chowdary Kota
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods to provide write termination for one time progr...
- Patent number 11,114,176
- Issue date Sep 7, 2021
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for optimizing magnetic torque and pulse shapin...
- Patent number 10,861,527
- Issue date Dec 8, 2020
- Inston, Inc.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Read tracking scheme for a memory device
- Patent number 10,796,735
- Issue date Oct 6, 2020
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Differential spin orbit torque magnetic random access memory (SOT-M...
- Patent number 10,483,457
- Issue date Nov 19, 2019
- QUALCOMM Incorporated
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for reducing write error rate in magnetoelectri...
- Patent number 10,460,786
- Issue date Oct 29, 2019
- Inston, Inc.
- Albert Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parallel write scheme utilizing spin hall effect-assisted spin tran...
- Patent number 10,460,785
- Issue date Oct 29, 2019
- QUALCOMM Incorporated
- Hochul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensing circuit and memory using thereof
- Patent number 10,255,976
- Issue date Apr 9, 2019
- INSTON INC.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing circuit and memory using thereof
- Patent number 10,199,100
- Issue date Feb 5, 2019
- INSTON INC.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems for implementing word line pulse techniques in magnetoelect...
- Patent number 10,102,893
- Issue date Oct 16, 2018
- Inston Inc.
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and calibration method for the same
- Patent number 9,972,400
- Issue date May 15, 2018
- INSTON INC.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Fast and low-power sense amplifier and writing circuit for high-spe...
- Patent number 9,672,886
- Issue date Jun 6, 2017
- The Regents of the University of California
- Kang L. Wang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
High-Speed and Area-Efficient Parallel-Write-and-Read Memory
- Publication number 20250022494
- Publication date Jan 16, 2025
- QUALCOMM Incorporated
- Hochul LEE
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH DOUBLE REDUNDANCY
- Publication number 20240395320
- Publication date Nov 28, 2024
- QUALCOMM Incorporated
- Dhvani SHETH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH DOUBLE REDUNDANCY
- Publication number 20230395139
- Publication date Dec 7, 2023
- QUALCOMM Incorporated
- Dhvani SHETH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY WITH A SENSE AMPLIFIER ISOLATION SCHEME FOR ENHANCING MEMORY...
- Publication number 20230087277
- Publication date Mar 23, 2023
- QUALCOMM Incorporated
- Hochul LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Memory with Reduced Capacitance at a Sense Amplifier
- Publication number 20230066241
- Publication date Mar 2, 2023
- QUALCOMM Incorporated
- Arun Babu PALLERLA
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH BUILT-IN FLEXIBLE DOUBLE REDUNDANCY
- Publication number 20210407559
- Publication date Dec 30, 2021
- QUALCOMM Incorporated
- Anil Chowdary KOTA
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods to Provide Write Termination for One Time Progr...
- Publication number 20210280263
- Publication date Sep 9, 2021
- QUALCOMM Incorporated
- Hochul LEE
- G11 - INFORMATION STORAGE
Information Patent Application
TESTING ONE-TIME PROGRAMMABLE (OTP) MEMORY WITH DATA INPUT CAPTURE...
- Publication number 20210257007
- Publication date Aug 19, 2021
- QUALCOMM Incorporated
- Anil KOTA
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICALLY UNCLONABLE FUNCTION (PUF) IN PROGRAMMABLE READ-ONLY MEMO...
- Publication number 20200365222
- Publication date Nov 19, 2020
- QUALCOMM Incorporated
- Hochul LEE
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Systems and Methods for Optimizing Magnetic Torque and Pulse Shapin...
- Publication number 20200035282
- Publication date Jan 30, 2020
- Inston, Inc.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING CIRCUIT AND MEMORY USING THEREOF
- Publication number 20190108879
- Publication date Apr 11, 2019
- INSTON INC.
- ALBERT LEE
- G11 - INFORMATION STORAGE
Information Patent Application
Systems and Methods for Reducing Write Error Rate in Magnetoelectri...
- Publication number 20180374526
- Publication date Dec 27, 2018
- Inston, Inc.
- Albert Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Systems for Source Line Sensing of Magnetoelectric Junctions
- Publication number 20170372761
- Publication date Dec 28, 2017
- Inston Inc.
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Systems for Implementing Word Line Pulse Techniques in Magnetoelect...
- Publication number 20170372762
- Publication date Dec 28, 2017
- Inston Inc.
- Hochul Lee
- G11 - INFORMATION STORAGE
Information Patent Application
FAST AND LOW-POWER SENSE AMPLIFIER AND WRITING CIRCUIT FOR HIGH-SPE...
- Publication number 20170084322
- Publication date Mar 23, 2017
- The Regents of the University of California
- Kang L. Wang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory with double redundancy

Memory with a sense amplifier isolation scheme for enhancing memory...

Memory with reduced capacitance at a sense amplifier

Memory device with built-in flexible double redundancy

Memory with positively boosted write multiplexer

Systems and methods for driving wordlines using set-reset latches

One-time programmable (OTP) memory cell circuits employing a diode...

One-time programmable (OTP) memory cell circuits employing a diode...

Bitcell for data redundancy

Memory device with built-in flexible double redundancy

Testing one-time programmable (OTP) memory with data input capture...

Systems and methods to provide write termination for one time progr...

Systems and methods for optimizing magnetic torque and pulse shapin...

Read tracking scheme for a memory device

Differential spin orbit torque magnetic random access memory (SOT-M...

Systems and methods for reducing write error rate in magnetoelectri...

Parallel write scheme utilizing spin hall effect-assisted spin tran...

Sensing circuit and memory using thereof

Sensing circuit and memory using thereof

Systems for implementing word line pulse techniques in magnetoelect...

Nonvolatile memory device and calibration method for the same

Fast and low-power sense amplifier and writing circuit for high-spe...

Patents Applicationslast 30 patents

High-Speed and Area-Efficient Parallel-Write-and-Read Memory

MEMORY WITH DOUBLE REDUNDANCY

MEMORY WITH DOUBLE REDUNDANCY

MEMORY WITH A SENSE AMPLIFIER ISOLATION SCHEME FOR ENHANCING MEMORY...

Memory with Reduced Capacitance at a Sense Amplifier

MEMORY DEVICE WITH BUILT-IN FLEXIBLE DOUBLE REDUNDANCY

Systems and Methods to Provide Write Termination for One Time Progr...

TESTING ONE-TIME PROGRAMMABLE (OTP) MEMORY WITH DATA INPUT CAPTURE...

PHYSICALLY UNCLONABLE FUNCTION (PUF) IN PROGRAMMABLE READ-ONLY MEMO...

Systems and Methods for Optimizing Magnetic Torque and Pulse Shapin...

SENSING CIRCUIT AND MEMORY USING THEREOF

Systems and Methods for Reducing Write Error Rate in Magnetoelectri...

Systems for Source Line Sensing of Magnetoelectric Junctions

Systems for Implementing Word Line Pulse Techniques in Magnetoelect...

FAST AND LOW-POWER SENSE AMPLIFIER AND WRITING CIRCUIT FOR HIGH-SPE...