HOIMAN HUNG

Person

SAN JOSE, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration sequences with top surface profile modification
- Patent number 8,043,933
- Issue date Oct 25, 2011
- Applied Materials, Inc.
- Chien-Teh Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LPCVD gate hard mask
- Patent number 7,547,621
- Issue date Jun 16, 2009
- Applied Materials, Inc.
- Rajesh Kanuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying dielectric characteristics of dielectric layers
- Patent number 6,921,727
- Issue date Jul 26, 2005
- Applied Materials, Inc.
- Kang-Lie Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective process for etching oxide over nitride using hexaf...
- Patent number 6,849,193
- Issue date Feb 1, 2005
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision dielectric etch using hexafluorobutadiene
- Patent number 6,800,213
- Issue date Oct 5, 2004
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of silicon oxide etch rate and nitride selectivity usin...
- Patent number 6,797,189
- Issue date Sep 28, 2004
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch process for dielectric materials comprising oxidized organo si...
- Patent number 6,762,127
- Issue date Jul 13, 2004
- Yves Pierre Boiteux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching oxide using hexafluorobutadiene or related fluo...
- Patent number 6,602,434
- Issue date Aug 5, 2003
- Applied Materials, Inc.
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement of silicon oxide etch rate and substrate selectivity wi...
- Patent number 6,544,429
- Issue date Apr 8, 2003
- Applied Materials Inc.
- Hoiman (Raymond) Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric etch process reducing striations and maintaining critica...
- Patent number 6,432,318
- Issue date Aug 13, 2002
- Applied Materials, Inc.
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for etching oxide using a hexafluorobutadiene and manifesti...
- Patent number 6,387,287
- Issue date May 14, 2002
- Applied Materials, Inc.
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ integrated oxide etch process particularly useful for coppe...
- Patent number 6,380,096
- Issue date Apr 30, 2002
- Applied Materials, Inc.
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION
- Publication number 20100129982
- Publication date May 27, 2010
- Applied Materials, Inc.
- Chien-Teh Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LPCVD gate hard mask
- Publication number 20080026584
- Publication date Jan 31, 2008
- APPLIED MATERIALS, INC.
- Rajesh Kanuri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated equipment set for forming a low K dielectric interconnec...
- Publication number 20060246683
- Publication date Nov 2, 2006
- APPLIED MATERIALS, INC.
- Judon Tony Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for modifying dielectric characteristics of dielectric layers
- Publication number 20040180556
- Publication date Sep 16, 2004
- APPLIED MATERIALS, INC.
- Kang-Lie Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated equipment set for forming a low K dielectric interconnec...
- Publication number 20040007325
- Publication date Jan 15, 2004
- APPLIED MATERIALS, INC.
- Judon Tony Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch process for dielectric materials comprising oxidized organo si...
- Publication number 20030073321
- Publication date Apr 17, 2003
- Applied Material, Inc.
- Yves Pierre Boiteux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Top gas feed lid for semiconductor processing chamber
- Publication number 20030037879
- Publication date Feb 27, 2003
- APPLIED MATERIALS, INC.
- Farahmand E. Askarinam
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Precision dielectric etch using hexafluorobutadiene
- Publication number 20030036287
- Publication date Feb 20, 2003
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly selective process for etching oxide over nitride using hexaf...
- Publication number 20030000913
- Publication date Jan 2, 2003
- Hoiman Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU INTEGRATED OXIDE ETCH PROCESS PARTICULARLY USEFUL FOR COPPE...
- Publication number 20010008226
- Publication date Jul 19, 2001
- HOIMAN HUNG
- H01 - BASIC ELECTRIC ELEMENTS

HOIMAN HUNG

Person

Patents Grantslast 30 patents

Integration sequences with top surface profile modification

LPCVD gate hard mask

Method for modifying dielectric characteristics of dielectric layers

Highly selective process for etching oxide over nitride using hexaf...

Precision dielectric etch using hexafluorobutadiene

Enhancement of silicon oxide etch rate and nitride selectivity usin...

Etch process for dielectric materials comprising oxidized organo si...

Process for etching oxide using hexafluorobutadiene or related fluo...

Enhancement of silicon oxide etch rate and substrate selectivity wi...

Dielectric etch process reducing striations and maintaining critica...

Process for etching oxide using a hexafluorobutadiene and manifesti...

In-situ integrated oxide etch process particularly useful for coppe...

Patents Applicationslast 30 patents

INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION

LPCVD gate hard mask

Integrated equipment set for forming a low K dielectric interconnec...

Method for modifying dielectric characteristics of dielectric layers

Integrated equipment set for forming a low K dielectric interconnec...

Etch process for dielectric materials comprising oxidized organo si...

Top gas feed lid for semiconductor processing chamber

Precision dielectric etch using hexafluorobutadiene

Highly selective process for etching oxide over nitride using hexaf...

IN-SITU INTEGRATED OXIDE ETCH PROCESS PARTICULARLY USEFUL FOR COPPE...