Holger Schulze

Person

Villach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor device
- Patent number 12,249,551
- Issue date Mar 11, 2025
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,437,471
- Issue date Sep 6, 2022
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate having a bond pad material based on aluminum
- Patent number 11,410,950
- Issue date Aug 9, 2022
- Infineon Technologies AG
- Gert Pfahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with steep junctions and methods of manufactu...
- Patent number 10,998,402
- Issue date May 4, 2021
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device
- Patent number 10,957,764
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device having a metal adhesion and ba...
- Patent number 10,777,506
- Issue date Sep 15, 2020
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a doped zone in a semiconductor body
- Patent number 10,651,037
- Issue date May 12, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with steep junctions and methods of manufactu...
- Patent number 10,475,881
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a metal adhesion and barrier structure...
- Patent number 10,475,743
- Issue date Nov 12, 2019
- Infineon Technologies AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode with trench structures and including doped laye...
- Patent number 10,069,016
- Issue date Sep 4, 2018
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a vertical ed...
- Patent number 10,049,912
- Issue date Aug 14, 2018
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a surface with ripples
- Patent number 9,972,689
- Issue date May 15, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising field sto...
- Patent number 9,887,125
- Issue date Feb 6, 2018
- Infineon Technologies AG
- Holger Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and integrated circuit
- Patent number 9,825,136
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 9,613,805
- Issue date Apr 4, 2017
- Infineon Technologies AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with different contact regions
- Patent number 9,595,619
- Issue date Mar 14, 2017
- Infineon Technologies AG
- Holger Hüsken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a vertical edge termination structur...
- Patent number 9,570,542
- Issue date Feb 14, 2017
- Infineon Technologies AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser thermal annealing of deep doped region using structured antir...
- Patent number 9,558,948
- Issue date Jan 31, 2017
- Infineon Technologies Austria AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing a semiconductor diode
- Patent number 9,385,181
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with charge carrier lifetime reduction means
- Patent number 9,362,349
- Issue date Jun 7, 2016
- Infineon Technologies AG
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming a semiconductor device
- Patent number 9,123,828
- Issue date Sep 1, 2015
- Infineon Technologies AG
- Holger Hüsken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench structures including a recombinati...
- Patent number 8,921,931
- Issue date Dec 30, 2014
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulation layer having a varying thic...
- Patent number 8,895,453
- Issue date Nov 25, 2014
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor having a graded pn junction
- Patent number 8,741,750
- Issue date Jun 3, 2014
- Infineon Technologies Austria AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,367,532
- Issue date Feb 5, 2013
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,252,671
- Issue date Aug 28, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,003,502
- Issue date Aug 23, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate including laser...
- Patent number 7,842,590
- Issue date Nov 30, 2010
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising a field s...
- Patent number 7,754,590
- Issue date Jul 13, 2010
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method suitable therefor
- Patent number 7,514,750
- Issue date Apr 7, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA
- Publication number 20240154020
- Publication date May 9, 2024
- INFINEON TECHNOLOGIES AG
- Benedikt Stoib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20230048908
- Publication date Feb 16, 2023
- Damiano Cassese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION
- Publication number 20220406947
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Benedikt Stoib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20220375811
- Publication date Nov 24, 2022
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20210193800
- Publication date Jun 24, 2021
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate Having a Bond Pad Material Based on Aluminum
- Publication number 20210091025
- Publication date Mar 25, 2021
- INFINEON TECHNOLOGIES AG
- Gert Pfahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...
- Publication number 20200013722
- Publication date Jan 9, 2020
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH STEEP JUNCTIONS AND METHODS OF MANUFACTU...
- Publication number 20190378895
- Publication date Dec 12, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices with Steep Junctions and Methods of Manufactu...
- Publication number 20180040691
- Publication date Feb 8, 2018
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Metal Adhesion and Barrier Structure...
- Publication number 20170271268
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having a Vertical Ed...
- Publication number 20170148663
- Publication date May 25, 2017
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Different Contact Regions
- Publication number 20160043237
- Publication date Feb 11, 2016
- INFINEON TECHNOLOGIES AG
- Holger Hüsken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Comprising Field Sto...
- Publication number 20150357229
- Publication date Dec 10, 2015
- INFINEON TECHNOLOGIES AG
- Holger Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Semiconductor Device
- Publication number 20150303260
- Publication date Oct 22, 2015
- INFINEON TECHNOLOGIES AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A VERTICAL EDGE TERMINATION STRUCTUR...
- Publication number 20150279930
- Publication date Oct 1, 2015
- INFINEON TECHNOLOGIES AG
- Alexander Breymesser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT
- Publication number 20150263106
- Publication date Sep 17, 2015
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
- Publication number 20150206983
- Publication date Jul 23, 2015
- INFINEON TECHNOLOGIES AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming a Semiconductor Device
- Publication number 20150130013
- Publication date May 14, 2015
- INFINEON TECHNOLOGIES AG
- Holger Hüsken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode with Trench Structures
- Publication number 20150097262
- Publication date Apr 9, 2015
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Surface with Ripples
- Publication number 20150041963
- Publication date Feb 12, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with an Insulation Layer Having a Varying Thic...
- Publication number 20140306347
- Publication date Oct 16, 2014
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Charge Carrier Lifetime Reduction Means
- Publication number 20140015007
- Publication date Jan 16, 2014
- Dorothea Werber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Trench Structures
- Publication number 20130320487
- Publication date Dec 5, 2013
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20120315747
- Publication date Dec 13, 2012
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20110275202
- Publication date Nov 10, 2011
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR HAVING A GRADED PN JUNCTION
- Publication number 20100087053
- Publication date Apr 8, 2010
- Infineon Technologies Austria AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...
- Publication number 20090267200
- Publication date Oct 29, 2009
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and Fabrication method
- Publication number 20090186462
- Publication date Jul 23, 2009
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A FIELD S...
- Publication number 20080124902
- Publication date May 29, 2008
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method suitable therefor
- Publication number 20060081923
- Publication date Apr 20, 2006
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Holger Schulze

Person

Patents Grantslast 30 patents

Power semiconductor device

Power semiconductor device

Semiconductor substrate having a bond pad material based on aluminum

Semiconductor devices with steep junctions and methods of manufactu...

Vertical semiconductor device

Silicon carbide semiconductor device having a metal adhesion and ba...

Method for fabricating a doped zone in a semiconductor body

Semiconductor devices with steep junctions and methods of manufactu...

Semiconductor device having a metal adhesion and barrier structure...

Semiconductor diode with trench structures and including doped laye...

Method of manufacturing a semiconductor device having a vertical ed...

Semiconductor device having a surface with ripples

Method of manufacturing a semiconductor device comprising field sto...

Semiconductor component and integrated circuit

Method for forming a semiconductor device

Semiconductor device with different contact regions

Semiconductor device including a vertical edge termination structur...

Laser thermal annealing of deep doped region using structured antir...

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor device with charge carrier lifetime reduction means

Semiconductor device and method for forming a semiconductor device

Semiconductor device with trench structures including a recombinati...

Semiconductor device with an insulation layer having a varying thic...

Method for fabricating a semiconductor having a graded pn junction

Semiconductor device and fabrication method

Semiconductor device and fabrication method

Semiconductor device and fabrication method

Method for manufacturing a semiconductor substrate including laser...

Method of manufacturing a semiconductor device comprising a field s...

Semiconductor device and fabrication method suitable therefor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING ACTIVE DIODE AREA

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE INCLUDING A FIELD STOP REGION

Power Semiconductor Device

Power Semiconductor Device

Semiconductor Substrate Having a Bond Pad Material Based on Aluminum

Silicon Carbide Semiconductor Device Having a Metal Adhesion and Ba...

SEMICONDUCTOR DEVICES WITH STEEP JUNCTIONS AND METHODS OF MANUFACTU...

Semiconductor Devices with Steep Junctions and Methods of Manufactu...

Semiconductor Device Having a Metal Adhesion and Barrier Structure...

Method of Manufacturing a Semiconductor Device Having a Vertical Ed...

Semiconductor Device with Different Contact Regions

Method of Manufacturing a Semiconductor Device Comprising Field Sto...

Vertical Semiconductor Device

SEMICONDUCTOR DEVICE INCLUDING A VERTICAL EDGE TERMINATION STRUCTUR...

SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT

Semiconductor Diode and Method of Manufacturing a Semiconductor Diode

Semiconductor Device and Method for Forming a Semiconductor Device

Semiconductor Diode with Trench Structures

Semiconductor Device Having a Surface with Ripples

Semiconductor Device with an Insulation Layer Having a Varying Thic...

Semiconductor Device with Charge Carrier Lifetime Reduction Means

Semiconductor Device with Trench Structures

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

METHOD FOR FABRICATING A SEMICONDUCTOR HAVING A GRADED PN JUNCTION

METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...

Semiconductor device and Fabrication method

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING A FIELD S...

Semiconductor device and fabrication method suitable therefor