Hon-Sum Philip Wong

Person

Stanford, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tunnel junction selector MRAM
- Patent number 12,144,184
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
Information Patent Grant
Memory cell with built-in amplifying function, memory device and me...
- Patent number 11,967,375
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array, memory structure and operation method of memory array
- Patent number 11,901,004
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kerem Akarvardar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Tunnel junction selector MRAM
- Patent number 11,737,284
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mauricio Manfrini
Information Patent Grant
Method for low-cost, high-bandwidth monolithic system integration b...
- Patent number 11,735,515
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Murat Kerem Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, operation method of memory device and operation meth...
- Patent number 11,721,376
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory circuit
- Patent number 11,342,015
- Issue date May 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Cross-point memory-selector composite pillar stack structures and m...
- Patent number 11,177,435
- Issue date Nov 16, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide-resistive memory using two-dimensional edge electrodes
- Patent number 10,672,604
- Issue date Jun 2, 2020
- The Board of Trustees of the Leland Stanford Junior University
- Seunghyun Lee
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...
- Publication number 20240387351
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Murat Kerem AKARVARDAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL JUNCTION SELECTOR MRAM
- Publication number 20240389356
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mauricio Manfrini
Information Patent Application
METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...
- Publication number 20230352393
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Murat Kerem AKARVARDAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunnel Junction Selector MRAM
- Publication number 20230345737
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mauricio Manfrini
Information Patent Application
MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY
- Publication number 20230326525
- Publication date Oct 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kerem Akarvardar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE AND OPERATION METH...
- Publication number 20220246189
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND MEMORY CIRCUIT
- Publication number 20220165320
- Publication date May 26, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
Tunnel Junction selector MRAM
- Publication number 20220123050
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mauricio Manfrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH BUILT-IN AMPLIFYING FUNCTION, MEMORY DEVICE AND ME...
- Publication number 20220076741
- Publication date Mar 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...
- Publication number 20210407901
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kerem Akarvardar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY-SELECTOR COMPOSITE PILLAR STACK STRUCTURES AND M...
- Publication number 20210249596
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Xinyu Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide-resistive memory using two-dimensional edge electrodes
- Publication number 20180082840
- Publication date Mar 22, 2018
- Seunghyun Lee
- B82 - NANO-TECHNOLOGY

Hon-Sum Philip Wong

Person

Patents Grantslast 30 patents

Tunnel junction selector MRAM

Memory cell with built-in amplifying function, memory device and me...

Memory array, memory structure and operation method of memory array

Tunnel junction selector MRAM

Method for low-cost, high-bandwidth monolithic system integration b...

Memory device, operation method of memory device and operation meth...

Memory device and memory circuit

Cross-point memory-selector composite pillar stack structures and m...

Metal oxide-resistive memory using two-dimensional edge electrodes

Patents Applicationslast 30 patents

METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...

TUNNEL JUNCTION SELECTOR MRAM

METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...

Tunnel Junction Selector MRAM

MEMORY ARRAY, MEMORY STRUCTURE AND OPERATION METHOD OF MEMORY ARRAY

MEMORY DEVICE, OPERATION METHOD OF MEMORY DEVICE AND OPERATION METH...

MEMORY DEVICE AND MEMORY CIRCUIT

Tunnel Junction selector MRAM

MEMORY CELL WITH BUILT-IN AMPLIFYING FUNCTION, MEMORY DEVICE AND ME...

METHOD FOR LOW-COST, HIGH-BANDWIDTH MONOLITHIC SYSTEM INTEGRATION B...

CROSS-POINT MEMORY-SELECTOR COMPOSITE PILLAR STACK STRUCTURES AND M...

Metal oxide-resistive memory using two-dimensional edge electrodes