Hong He

Person

Armonk, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and process to tuck fin tips self-aligned to gates
- Patent number RE50174
- Issue date Oct 15, 2024
- TESSERA LLC
- Bruce B. Doris
Information Patent Grant
Silicon germanium alloy fins with reduced defects
- Patent number 11,201,231
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,840,247
- Issue date Nov 17, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing multilayer gate spacer to reduce erosion of semiconductor...
- Patent number 10,790,393
- Issue date Sep 29, 2020
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,777,557
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,734,385
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained silicon germanium PFET device and silicon N...
- Patent number 10,734,504
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Directional deposition of protection layer
- Patent number 10,714,596
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid substrate engineering in CMOS finFET integration for mobilit...
- Patent number 10,658,391
- Issue date May 19, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming a dense array of single crystallin...
- Patent number 10,629,431
- Issue date Apr 21, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing strained fin relaxation
- Patent number 10,615,278
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact process enabled by low temperature
- Patent number 10,566,454
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid aspect ratio trapping
- Patent number 10,559,662
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium alloy fins with reduced defects
- Patent number 10,529,829
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,529,717
- Issue date Jan 7, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with merge-free fins
- Patent number 10,529,858
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Orientation engineering in complementary metal oxide semiconductor...
- Patent number 10,453,841
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with a silicon germanium alloy channel and method of fabrica...
- Patent number 10,446,650
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained silicon germanium PFET device and silicon N...
- Patent number 10,446,670
- Issue date Oct 15, 2019
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium alloy fins with reduced defects
- Patent number 10,418,463
- Issue date Sep 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained silicon germanium PFET device and silicon N...
- Patent number 10,396,185
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin formation in fin field effect transistors
- Patent number 10,340,368
- Issue date Jul 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including fin having condensed channel region
- Patent number 10,319,811
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium fin channel formation
- Patent number 10,319,816
- Issue date Jun 11, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon germanium and silicon fins on oxide from...
- Patent number 10,283,418
- Issue date May 7, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utilizing multilayer gate spacer to reduce erosion of semiconductor...
- Patent number 10,243,079
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid substrate engineering in CMOS finFET integration for mobilit...
- Patent number 10,177,167
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microstructure of metal interconnect layer
- Patent number 10,170,425
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin density control of multigate devices through sidewall image tra...
- Patent number 10,170,327
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with abrupt junctions
- Patent number 10,170,499
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSMISSION OF UPLINK CONTROL INFORMATION IN WIRELESS SYSTEMS
- Publication number 20200228289
- Publication date Jul 16, 2020
- Hong He
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
SILICON GERMANIUM ALLOY FINS WITH REDUCED DEFECTS
- Publication number 20200083357
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20200075598
- Publication date Mar 5, 2020
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20190378840
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...
- Publication number 20190378839
- Publication date Dec 12, 2019
- International Business Machines Corporation
- Chia-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STOPLAYER
- Publication number 20190206864
- Publication date Jul 4, 2019
- International Business Machines Corporation
- Hong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...
- Publication number 20190172940
- Publication date Jun 6, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
- Publication number 20190019883
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...
- Publication number 20190006506
- Publication date Jan 3, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE
- Publication number 20180331039
- Publication date Nov 15, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON N...
- Publication number 20180323278
- Publication date Nov 8, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM AND SILICON FINS ON OXIDE FROM BULK WAFER
- Publication number 20180315668
- Publication date Nov 1, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FIN CHANNEL FORMATION
- Publication number 20180301534
- Publication date Oct 18, 2018
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...
- Publication number 20180223522
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Hsueh-Chung H. Chen
- F24 - HEATING RANGES VENTILATING
Information Patent Application
FINFET WITH MERGE-FREE FINS
- Publication number 20180197980
- Publication date Jul 12, 2018
- GLOBALFOUNDRIES INC.
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF SILICON GERMANIUM-ON-INSULATOR FINFET
- Publication number 20180096883
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Bruce DORIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE WITH ABRUPT JUNCTIONS
- Publication number 20180097017
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING A DENSE ARRAY OF SINGLE CRYSTALLIN...
- Publication number 20180076029
- Publication date Mar 15, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING STRAINED FIN RELAXATION
- Publication number 20180069027
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND PROCESS TO TUCK FIN TIPS SELF-ALIGNED TO GATES
- Publication number 20180061942
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND PROCESS TO TUCK FIN TIPS SELF-ALIGNED TO GATES
- Publication number 20180061941
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON N...
- Publication number 20170365685
- Publication date Dec 21, 2017
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTIONAL DEPOSITION OF PROTECTION LAYER
- Publication number 20170294524
- Publication date Oct 12, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...
- Publication number 20170271167
- Publication date Sep 21, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECTIONAL DEPOSITION OF PROTECTION LAYER
- Publication number 20170256644
- Publication date Sep 7, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FUSE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20170194250
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FIN CHANNEL FORMATION
- Publication number 20170194481
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Hong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS
- Publication number 20170194463
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ASPECT RATIO TRAPPING
- Publication number 20170194435
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...
- Publication number 20170194138
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Paul D. Brabant
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure and process to tuck fin tips self-aligned to gates

Silicon germanium alloy fins with reduced defects

Orientation engineering in complementary metal oxide semiconductor...

Utilizing multilayer gate spacer to reduce erosion of semiconductor...

Orientation engineering in complementary metal oxide semiconductor...

Orientation engineering in complementary metal oxide semiconductor...

Integration of strained silicon germanium PFET device and silicon N...

Directional deposition of protection layer

Hybrid substrate engineering in CMOS finFET integration for mobilit...

Method and structure for forming a dense array of single crystallin...

Preventing strained fin relaxation

Self-aligned contact process enabled by low temperature

Hybrid aspect ratio trapping

Silicon germanium alloy fins with reduced defects

Orientation engineering in complementary metal oxide semiconductor...

FinFET with merge-free fins

Orientation engineering in complementary metal oxide semiconductor...

FinFET with a silicon germanium alloy channel and method of fabrica...

Integration of strained silicon germanium PFET device and silicon N...

Silicon germanium alloy fins with reduced defects

Integration of strained silicon germanium PFET device and silicon N...

Fin formation in fin field effect transistors

Semiconductor device including fin having condensed channel region

Silicon germanium fin channel formation

Method of forming silicon germanium and silicon fins on oxide from...

Utilizing multilayer gate spacer to reduce erosion of semiconductor...

Hybrid substrate engineering in CMOS finFET integration for mobilit...

Microstructure of metal interconnect layer

Fin density control of multigate devices through sidewall image tra...

FinFET device with abrupt junctions

Patents Applicationslast 30 patents

TRANSMISSION OF UPLINK CONTROL INFORMATION IN WIRELESS SYSTEMS

SILICON GERMANIUM ALLOY FINS WITH REDUCED DEFECTS

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

ORIENTATION ENGINEERING IN COMPLEMENTARY METAL OXIDE SEMICONDUCTOR...

STOPLAYER

UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

UTILIZING MULTILAYER GATE SPACER TO REDUCE EROSION OF SEMICONDUCTOR...

SELF-ALIGNED CONTACT PROCESS ENABLED BY LOW TEMPERATURE

INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON N...

SILICON GERMANIUM AND SILICON FINS ON OXIDE FROM BULK WAFER

SILICON GERMANIUM FIN CHANNEL FORMATION

CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL H...

FINFET WITH MERGE-FREE FINS

FABRICATION OF SILICON GERMANIUM-ON-INSULATOR FINFET

FinFET DEVICE WITH ABRUPT JUNCTIONS

METHOD AND STRUCTURE FOR FORMING A DENSE ARRAY OF SINGLE CRYSTALLIN...

PREVENTING STRAINED FIN RELAXATION

STRUCTURE AND PROCESS TO TUCK FIN TIPS SELF-ALIGNED TO GATES

STRUCTURE AND PROCESS TO TUCK FIN TIPS SELF-ALIGNED TO GATES

INTEGRATION OF STRAINED SILICON GERMANIUM PFET DEVICE AND SILICON N...

DIRECTIONAL DEPOSITION OF PROTECTION LAYER

FIN DENSITY CONTROL OF MULTIGATE DEVICES THROUGH SIDEWALL IMAGE TRA...

DIRECTIONAL DEPOSITION OF PROTECTION LAYER

ANTI-FUSE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SILICON GERMANIUM FIN CHANNEL FORMATION

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

HYBRID ASPECT RATIO TRAPPING

LOW TEMPERATURE SELECTIVE DEPOSITION EMPLOYING A GERMANIUM-CONTAINI...