Hong-Qiang Lu

Person

Gresham, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and structure for forming copper barrier layers integral wi...
- Patent number 7,646,077
- Issue date Jan 12, 2010
- LSI Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric barrier films for use as copper barrier layers in semico...
- Patent number 7,427,563
- Issue date Sep 23, 2008
- LSI Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer barrier film techniques to prevent resist poisoning
- Patent number 7,393,780
- Issue date Jul 1, 2008
- LSI Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer barrier film techniques to prevent resist poisoning
- Patent number 7,071,094
- Issue date Jul 4, 2006
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon nanotube memory cell for integrated circuit structure with r...
- Patent number 6,955,937
- Issue date Oct 18, 2005
- LSI Logic Corporation
- Peter A. Burke
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric barrier films for use as copper barrier layers in semico...
- Patent number 6,939,800
- Issue date Sep 6, 2005
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual layer barrier film techniques to prevent resist poisoning
- Patent number 6,812,134
- Issue date Nov 2, 2004
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming dielectric layers having reduced d...
- Patent number 6,774,057
- Issue date Aug 10, 2004
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing for forming integrated circuit structure with low dielec...
- Patent number 6,559,033
- Issue date May 6, 2003
- LSI Logic Corporation
- John Rongxiang Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming metal-filled openings in low dielectric constan...
- Patent number 6,503,840
- Issue date Jan 7, 2003
- LSI Logic Corporation
- Wilbur G. Catabay
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIELECTRIC BARRIER FILMS FOR USE AS COPPER BARRIER LAYERS IN SEMICO...
- Publication number 20080303155
- Publication date Dec 11, 2008
- LSI Corporation
- Hong-Qiang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual layer barrier film techniques to prevent resist poisoning
- Publication number 20060205203
- Publication date Sep 14, 2006
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric barrier films for use as copper barrier layers in semico...
- Publication number 20050208758
- Publication date Sep 22, 2005
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual layer barrier film techniques to prevent resist poisoning
- Publication number 20040253784
- Publication date Dec 16, 2004
- LSI Logic Corporation
- Hong-Qiang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming metal-filled openings in low dielectric constan...
- Publication number 20020164877
- Publication date Nov 7, 2002
- Wilbur G. Catabay
- H01 - BASIC ELECTRIC ELEMENTS

Hong-Qiang Lu

Person

Patents Grantslast 30 patents

Methods and structure for forming copper barrier layers integral wi...

Dielectric barrier films for use as copper barrier layers in semico...

Dual layer barrier film techniques to prevent resist poisoning

Dual layer barrier film techniques to prevent resist poisoning

Carbon nanotube memory cell for integrated circuit structure with r...

Dielectric barrier films for use as copper barrier layers in semico...

Dual layer barrier film techniques to prevent resist poisoning

Method and structure for forming dielectric layers having reduced d...

Processing for forming integrated circuit structure with low dielec...

Process for forming metal-filled openings in low dielectric constan...

Patents Applicationslast 30 patents

DIELECTRIC BARRIER FILMS FOR USE AS COPPER BARRIER LAYERS IN SEMICO...

Dual layer barrier film techniques to prevent resist poisoning

Dielectric barrier films for use as copper barrier layers in semico...

Dual layer barrier film techniques to prevent resist poisoning

Process for forming metal-filled openings in low dielectric constan...