Hongbae Park

Person

Seoul, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number RE49538
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Hoonjoo Na
Information Patent Grant
Semiconductor device including fin field effect transistor
- Patent number 11,289,478
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Seonghwa Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,766,366
- Issue date Jul 1, 2014
- Samsung Electronics Co., Ltd.
- Hoonjoo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,633,546
- Issue date Jan 21, 2014
- Samsung Electronics Co., Ltd.
- Hongbae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,309,411
- Issue date Nov 13, 2012
- Samsung Electronics Co., Ltd.
- Hoonjoo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device
- Patent number 8,278,168
- Issue date Oct 2, 2012
- Samsung Electronics Co., Ltd.
- Hongbae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and associated methods
- Patent number 8,044,469
- Issue date Oct 25, 2011
- Samsung Electronics Co., Ltd.
- Hongbae Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING FIN FIELD EFFECT TRANSISTOR
- Publication number 20220223592
- Publication date Jul 14, 2022
- Samsung Electronics Co., Ltd.
- Seonghwa Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20200083220
- Publication date Mar 12, 2020
- Samsung Electronics Co., Ltd.
- Seonghwa Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS TRANSISTORS INCLUDING A RECESSED METAL PATTERN IN A TRENCH
- Publication number 20150035077
- Publication date Feb 5, 2015
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device And Method Of Fabricating The Same
- Publication number 20130043518
- Publication date Feb 21, 2013
- Samsung Electronics Co., Ltd.
- Hoonjoo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120280329
- Publication date Nov 8, 2012
- Hongbae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Manufacturing MOS Transistors
- Publication number 20120052641
- Publication date Mar 1, 2012
- Hye-Lan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20120009746
- Publication date Jan 12, 2012
- Samsung Electronics Co., Ltd.
- Hongbae Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device And Method Of Fabricating The Same
- Publication number 20110237062
- Publication date Sep 29, 2011
- Samsung Electronics Co., Ltd.
- Hoonjoo Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Field Effect Transistors and Devices Formed Thereby
- Publication number 20100102399
- Publication date Apr 29, 2010
- Sangjin Hyun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and associated methods
- Publication number 20100072556
- Publication date Mar 25, 2010
- Hongbae PARK
- H01 - BASIC ELECTRIC ELEMENTS

Hongbae Park

Person

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device including fin field effect transistor

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device and method of fabricating the same

Methods of forming a semiconductor device

Semiconductor device and associated methods

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING FIN FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

MOS TRANSISTORS INCLUDING A RECESSED METAL PATTERN IN A TRENCH

Semiconductor Device And Method Of Fabricating The Same

SEMICONDUCTOR DEVICE

Methods of Manufacturing MOS Transistors

METHODS OF FORMING A SEMICONDUCTOR DEVICE

Semiconductor Device And Method Of Fabricating The Same

Methods of Forming Field Effect Transistors and Devices Formed Thereby

Semiconductor device and associated methods