Hongbo Zhao

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Deep trench isolation for RF devices on SOI
- Patent number 10,074,650
- Issue date Sep 11, 2018
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon via with amorphous silicon layer and fabrication method the...
- Patent number 9,607,895
- Issue date Mar 28, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Zuopeng He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming deep trench isolation for RF devices on SOI
- Patent number 9,349,748
- Issue date May 24, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI
- Publication number 20170287908
- Publication date Oct 5, 2017
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI
- Publication number 20160247801
- Publication date Aug 25, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF
- Publication number 20160013135
- Publication date Jan 14, 2016
- Semiconductor Manufacturing International (Shanghai) Corporation
- ZUOPENG HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING DEEP TRENCH ISOLATION FOR RF DEVICES ON SOI
- Publication number 20150187794
- Publication date Jul 2, 2015
- Semiconductor Manufacturing International (Shanghai) Corporation
- Herb He Huang
- H01 - BASIC ELECTRIC ELEMENTS