Hongching Shan

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Slotted electrostatic shield modification for improved etch and CVD...
- Patent number 8,413,604
- Issue date Apr 9, 2013
- Mattson Technology, Inc.
- Rene George
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Slotted electrostatic shield modification for improved etch and CVD...
- Patent number 7,232,767
- Issue date Jun 19, 2007
- Mattson Technology, Inc.
- Rene George
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Ashable layers for reducing critical dimensions of integrated circu...
- Patent number 7,105,442
- Issue date Sep 12, 2006
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductively-coupled plasma source and circuit for coupl...
- Patent number 6,825,618
- Issue date Nov 30, 2004
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric etch chamber with expanded process window
- Patent number 6,797,639
- Issue date Sep 28, 2004
- Applied Materials Inc.
- James D Carducci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric etch chamber with expanded process window
- Patent number 6,716,302
- Issue date Apr 6, 2004
- Applied Materials Inc.
- James D Carducci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield or ring surrounding semiconductor workpiece in plasma chamber
- Patent number 6,689,249
- Issue date Feb 10, 2004
- Applied Materials, Inc.
- Kuang-Han Ke
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Highly selective oxide etch process using hexafluorobutadiene
- Patent number 6,613,691
- Issue date Sep 2, 2003
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed inductively-coupled plasma source and circuit for coupl...
- Patent number 6,568,346
- Issue date May 27, 2003
- Applied Materials Inc.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting DC bias voltage in plasma chamber
- Patent number 6,513,452
- Issue date Feb 4, 2003
- Applied Materials Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor cooled ceiling with an array of thermally isolated p...
- Patent number 6,432,259
- Issue date Aug 13, 2002
- Applied Materials, Inc.
- Hamid Noorbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch method using a dielectric etch chamber with expanded process w...
- Patent number 6,403,491
- Issue date Jun 11, 2002
- Applied Materials, Inc.
- Jingbao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity etch using an external plasma discharge
- Patent number 6,387,288
- Issue date May 14, 2002
- Applied Materials, Inc.
- Claes Bjorkman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield or ring surrounding semiconductor workpiece in plasma chamber
- Patent number 6,284,093
- Issue date Sep 4, 2001
- Applied Materials, Inc.
- Kuang-Han Ke
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Distributed inductively-coupled plasma source
- Patent number 6,273,022
- Issue date Aug 14, 2001
- Applied Materials, Inc.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting DC bias voltage in plasma chamber
- Patent number 6,221,782
- Issue date Apr 24, 2001
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor having a helicon wave high density plasma source
- Patent number 6,189,484
- Issue date Feb 20, 2001
- Applied Materials Inc.
- Gerald Zheyao Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide etch process using hexafluorobutadiene and related unsaturate...
- Patent number 6,174,451
- Issue date Jan 16, 2001
- Applied Materials, Inc.
- Raymond Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetically-enhanced plasma chamber with non-uniform magnetic field
- Patent number 6,113,731
- Issue date Sep 5, 2000
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film processing plasma reactor chamber with radially upward sl...
- Patent number 6,076,482
- Issue date Jun 20, 2000
- Applied Materials, Inc.
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High selectivity etch using an external plasma discharge
- Patent number 6,074,514
- Issue date Jun 13, 2000
- Applied Materials, Inc.
- Claes Bjorkman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow magnetic fields for generating circulating electrons to enh...
- Patent number 6,022,446
- Issue date Feb 8, 2000
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diagnostic pedestal assembly for a semiconductor wafer processing s...
- Patent number 5,989,349
- Issue date Nov 23, 1999
- Applied Materials, Inc.
- Kuang-Han Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Distributed microwave plasma reactor for semiconductor processing
- Patent number 5,948,168
- Issue date Sep 7, 1999
- Applied Materials, Inc.
- Hongching Shan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Broad-band adjustable power ratio phase-inverting plasma reactor
- Patent number 5,865,937
- Issue date Feb 2, 1999
- Applied Materials, Inc.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching dielectric layers with high selectivity and low...
- Patent number 5,843,847
- Issue date Dec 1, 1998
- Applied Materials, Inc.
- Bryan Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching dielectric using fluorohydrocarbon gas, NH.sub.3...
- Patent number 5,814,563
- Issue date Sep 29, 1998
- Applied Materials, Inc.
- Ji Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for improving wafer and chuck edge protection
- Patent number 5,740,009
- Issue date Apr 14, 1998
- Applied Materials, Inc.
- Bryan Pu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Distributed microwave plasma reactor for semiconductor processing
- Patent number 5,702,530
- Issue date Dec 30, 1997
- Applied Materials, Inc.
- Hongching Shan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor with programmable reactant gas distribution
- Patent number 5,683,517
- Issue date Nov 4, 1997
- Applied Materials, Inc.
- Hongching Shan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Slotted Electrostatic Shield Modification for Improved Etch and CVD...
- Publication number 20070113979
- Publication date May 24, 2007
- Rene George
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Slotted electrostatic shield modification for improved etch and CVD...
- Publication number 20040244691
- Publication date Dec 9, 2004
- Rene George
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Gas flow division in a wafer processing system having multiple cham...
- Publication number 20030230239
- Publication date Dec 18, 2003
- Applied Materials, Inc.
- Hongching Shan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Distributed inductively-coupled plasma source and circuit for coupl...
- Publication number 20030192644
- Publication date Oct 16, 2003
- APPLIED MATERIALS, INC.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric etch chamber with expanded process window
- Publication number 20030037880
- Publication date Feb 27, 2003
- APPLIED MATERIALS, INC.
- James D. Carducci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shield or ring surrounding semiconductor workpiece in plasma chamber
- Publication number 20020066531
- Publication date Jun 6, 2002
- APPLIED MATERIALS, INC.
- Kuang-Han Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Distributed inductively-coupled plasma source and circuit for coupl...
- Publication number 20010054383
- Publication date Dec 27, 2001
- APPLIED MATERIALS, INC.
- Bryan Y. Pu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adjusting DC bias voltage in plasma chamber
- Publication number 20010014540
- Publication date Aug 16, 2001
- APPLIED MATERIALS, INC.
- Hongching Shan
- H01 - BASIC ELECTRIC ELEMENTS

Hongching Shan

Person

Patents Grantslast 30 patents

Slotted electrostatic shield modification for improved etch and CVD...

Slotted electrostatic shield modification for improved etch and CVD...

Ashable layers for reducing critical dimensions of integrated circu...

Distributed inductively-coupled plasma source and circuit for coupl...

Dielectric etch chamber with expanded process window

Dielectric etch chamber with expanded process window

Shield or ring surrounding semiconductor workpiece in plasma chamber

Highly selective oxide etch process using hexafluorobutadiene

Distributed inductively-coupled plasma source and circuit for coupl...

Adjusting DC bias voltage in plasma chamber

Plasma reactor cooled ceiling with an array of thermally isolated p...

Etch method using a dielectric etch chamber with expanded process w...

High selectivity etch using an external plasma discharge

Shield or ring surrounding semiconductor workpiece in plasma chamber

Distributed inductively-coupled plasma source

Adjusting DC bias voltage in plasma chamber

Plasma reactor having a helicon wave high density plasma source

Oxide etch process using hexafluorobutadiene and related unsaturate...

Magnetically-enhanced plasma chamber with non-uniform magnetic field

Thin film processing plasma reactor chamber with radially upward sl...

High selectivity etch using an external plasma discharge

Shallow magnetic fields for generating circulating electrons to enh...

Diagnostic pedestal assembly for a semiconductor wafer processing s...

Distributed microwave plasma reactor for semiconductor processing

Broad-band adjustable power ratio phase-inverting plasma reactor

Method for etching dielectric layers with high selectivity and low...

Method for etching dielectric using fluorohydrocarbon gas, NH.sub.3...

Apparatus for improving wafer and chuck edge protection

Distributed microwave plasma reactor for semiconductor processing

Plasma reactor with programmable reactant gas distribution

Patents Applicationslast 30 patents

Slotted Electrostatic Shield Modification for Improved Etch and CVD...

Slotted electrostatic shield modification for improved etch and CVD...

Gas flow division in a wafer processing system having multiple cham...

Distributed inductively-coupled plasma source and circuit for coupl...

Dielectric etch chamber with expanded process window

Shield or ring surrounding semiconductor workpiece in plasma chamber

Distributed inductively-coupled plasma source and circuit for coupl...

Adjusting DC bias voltage in plasma chamber