Hongfa Luan

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a semiconductor device by driving hydrogen into a...
- Patent number 12,183,581
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device by driving hydrogen into a d...
- Patent number 11,776,814
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having hydrogen in a dielectric layer
- Patent number 10,950,447
- Issue date Mar 16, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having hydrogen in a dielectric layer
- Patent number 10,714,348
- Issue date Jul 14, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device by high-pressure anneal an...
- Patent number 10,504,735
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hongfa Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor film with adhesion layer and method for forming the same
- Patent number 10,269,900
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor film with adhesion layer and method for forming the same
- Patent number 9,660,023
- Issue date May 23, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing methods and methods of forming i...
- Patent number 9,607,826
- Issue date Mar 28, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gin-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor film with adhesion layer and method for forming the same
- Patent number 9,219,120
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising a fin
- Patent number 9,153,657
- Issue date Oct 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing methods and methods of forming i...
- Patent number 9,006,802
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gin-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 8,889,497
- Issue date Nov 18, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Forming a Semiconductor Device by Driving Hydrogen into a...
- Publication number 20230386847
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Hydrogen in a Dielectric Layer
- Publication number 20210202255
- Publication date Jul 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Hydrogen in a Dielectric Layer
- Publication number 20200321216
- Publication date Oct 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Device by High-Pressure Anneal an...
- Publication number 20200013623
- Publication date Jan 9, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Performance Improvement
- Publication number 20190103277
- Publication date Apr 4, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hongfa LUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Film with Adhesion Layer and Method for Forming the Same
- Publication number 20170323939
- Publication date Nov 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Film with Adhesion Layer and Method for Forming the Same
- Publication number 20160111492
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Manufacturing Methods and Methods of Forming I...
- Publication number 20150221504
- Publication date Aug 6, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gin-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Film with Adhesion Layer and Method for Forming the Same
- Publication number 20150102470
- Publication date Apr 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Ming Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES COMPRISING A FIN
- Publication number 20150028389
- Publication date Jan 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Manufacture Thereof
- Publication number 20140183633
- Publication date Jul 3, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chi-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Manufacturing Methods and Methods of Forming I...
- Publication number 20130043512
- Publication date Feb 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gin-Chen Huang
- H01 - BASIC ELECTRIC ELEMENTS

Hongfa Luan

Person

Patents Grantslast 30 patents

Method of forming a semiconductor device by driving hydrogen into a...

Method of forming semiconductor device by driving hydrogen into a d...

Semiconductor device having hydrogen in a dielectric layer

Semiconductor device having hydrogen in a dielectric layer

Method of forming a semiconductor device by high-pressure anneal an...

Semiconductor film with adhesion layer and method for forming the same

Semiconductor film with adhesion layer and method for forming the same

Semiconductor device manufacturing methods and methods of forming i...

Semiconductor film with adhesion layer and method for forming the same

Semiconductor devices comprising a fin

Semiconductor device manufacturing methods and methods of forming i...

Semiconductor devices and methods of manufacture thereof

Patents Applicationslast 30 patents

Method of Forming a Semiconductor Device by Driving Hydrogen into a...

Semiconductor Device Having Hydrogen in a Dielectric Layer

Semiconductor Device Having Hydrogen in a Dielectric Layer

Method of Forming a Semiconductor Device by High-Pressure Anneal an...

Semiconductor Device Performance Improvement

Semiconductor Film with Adhesion Layer and Method for Forming the Same

Semiconductor Film with Adhesion Layer and Method for Forming the Same

Semiconductor Device Manufacturing Methods and Methods of Forming I...

Semiconductor Film with Adhesion Layer and Method for Forming the Same

SEMICONDUCTOR DEVICES COMPRISING A FIN

Semiconductor Devices and Methods of Manufacture Thereof

Semiconductor Device Manufacturing Methods and Methods of Forming I...