Hongning Yang

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Partially biased isolation in semiconductor device
- Patent number 10,297,676
- Issue date May 21, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,217,860
- Issue date Feb 26, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 10,186,612
- Issue date Jan 22, 2019
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation with RESURF layer arrangement
- Patent number 10,177,252
- Issue date Jan 8, 2019
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device isolation via depleted coupling layer
- Patent number 9,941,350
- Issue date Apr 10, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making
- Patent number 9,871,135
- Issue date Jan 16, 2018
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating source region arrangement
- Patent number 9,831,338
- Issue date Nov 28, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial, self-biased isolation in semiconductor devices
- Patent number 9,825,169
- Issue date Nov 21, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET with isolation region
- Patent number 9,761,707
- Issue date Sep 12, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially biased isolation in semiconductor devices
- Patent number 9,728,600
- Issue date Aug 8, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced 3D resurf
- Patent number 9,691,880
- Issue date Jun 27, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adjusted isolation bias in semiconductor devices
- Patent number 9,680,011
- Issue date Jun 13, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite drift region and related fabric...
- Patent number 9,666,671
- Issue date May 30, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,647,082
- Issue date May 9, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliability in mergeable semiconductor devices
- Patent number 9,640,635
- Issue date May 2, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial, self-biased isolation in semiconductor devices
- Patent number 9,614,074
- Issue date Apr 4, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate semiconductor devices with improved hot-carrier injectio...
- Patent number 9,614,041
- Issue date Apr 4, 2017
- NXP USA, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage LDMOS device
- Patent number 9,601,595
- Issue date Mar 21, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor device with different channel widths
- Patent number 9,601,614
- Issue date Mar 21, 2017
- NXP USA, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and related fabrication methods
- Patent number 9,590,097
- Issue date Mar 7, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with peripheral breakdown protection
- Patent number 9,543,379
- Issue date Jan 10, 2017
- NXP USA, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diodes with multiple junctions
- Patent number 9,543,454
- Issue date Jan 10, 2017
- NXP USA, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device with high-potential-biased isolation ring
- Patent number 9,508,845
- Issue date Nov 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resurf high voltage diode
- Patent number 9,496,333
- Issue date Nov 15, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with enhanced 3D resurf
- Patent number 9,490,322
- Issue date Nov 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with composite drift region
- Patent number 9,478,456
- Issue date Oct 25, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode
- Patent number 9,466,665
- Issue date Oct 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for producing bipolar transistors with improved stability
- Patent number 9,466,687
- Issue date Oct 11, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating diodes with multiple junctions
- Patent number 9,401,412
- Issue date Jul 26, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown voltage
- Patent number 9,385,229
- Issue date Jul 5, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT
- Publication number 20180130903
- Publication date May 10, 2018
- NXP USA, Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20170352756
- Publication date Dec 7, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170179279
- Publication date Jun 22, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES
- Publication number 20170125584
- Publication date May 4, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODES WITH MULTIPLE JUNCTIONS
- Publication number 20170084715
- Publication date Mar 23, 2017
- NXP USA, Inc.
- XIN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077295
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES
- Publication number 20170077219
- Publication date Mar 16, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE
- Publication number 20170077296
- Publication date Mar 16, 2017
- NXP USA, Inc.
- Hongning YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE SEMICONDUCTOR DEVICES WITH IMPROVED HOT-CARRIER INJECTIO...
- Publication number 20170077233
- Publication date Mar 16, 2017
- Freescale Semiconductor Inc.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF
- Publication number 20170053999
- Publication date Feb 23, 2017
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Semiconductor Device with Different Channel Widths
- Publication number 20160284841
- Publication date Sep 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Won Gi Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS
- Publication number 20160181421
- Publication date Jun 23, 2016
- Freescale Semiconductor Inc.
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BREAKDOWN VOLTAGE LDMOS DEVICE
- Publication number 20160099341
- Publication date Apr 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20160087096
- Publication date Mar 24, 2016
- HONGNING YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES
- Publication number 20150364576
- Publication date Dec 17, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH COMPOSITE DRIFT REGION AND RELATED FABRIC...
- Publication number 20150333177
- Publication date Nov 19, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Diodes with Multiple Junctions
- Publication number 20150325674
- Publication date Nov 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Semiconductor Device with Multiple Threshold Voltages
- Publication number 20150325565
- Publication date Nov 12, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Peripheral Breakdown Protection
- Publication number 20150270333
- Publication date Sep 24, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Diode
- Publication number 20150228713
- Publication date Aug 13, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resurf High Voltage Diode
- Publication number 20150155350
- Publication date Jun 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diodes with Multiple Junctions and Fabrication Methods Therefor
- Publication number 20150123236
- Publication date May 7, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mergeable Semiconductor Device with Improved Reliability
- Publication number 20150097238
- Publication date Apr 9, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS
- Publication number 20150056751
- Publication date Feb 26, 2015
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES
- Publication number 20150004768
- Publication date Jan 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NOTCHED GATE
- Publication number 20140332901
- Publication date Nov 13, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS
- Publication number 20140235025
- Publication date Aug 21, 2014
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY BITCELL
- Publication number 20140209988
- Publication date Jul 31, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS
- Publication number 20140203410
- Publication date Jul 24, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Zhihong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PRODUCING NEAR ZERO CHANNEL LENGTH FIELD DRIFT LDMOS
- Publication number 20140206168
- Publication date Jul 24, 2014
- Hongning Yang
- H01 - BASIC ELECTRIC ELEMENTS

Hongning Yang

Person

Patents Grantslast 30 patents

Partially biased isolation in semiconductor device

Partially biased isolation in semiconductor devices

Partially biased isolation in semiconductor devices

Semiconductor device isolation with RESURF layer arrangement

Semiconductor device isolation via depleted coupling layer

Semiconductor device and method of making

Alternating source region arrangement

Partial, self-biased isolation in semiconductor devices

Laterally diffused MOSFET with isolation region

Partially biased isolation in semiconductor devices

Semiconductor device with enhanced 3D resurf

Self-adjusted isolation bias in semiconductor devices

Semiconductor device with composite drift region and related fabric...

Diodes with multiple junctions

Reliability in mergeable semiconductor devices

Partial, self-biased isolation in semiconductor devices

Multi-gate semiconductor devices with improved hot-carrier injectio...

High breakdown voltage LDMOS device

Composite semiconductor device with different channel widths

Semiconductor devices and related fabrication methods

Semiconductor device with peripheral breakdown protection

Diodes with multiple junctions

LDMOS device with high-potential-biased isolation ring

Resurf high voltage diode

Semiconductor device with enhanced 3D resurf

Semiconductor device with composite drift region

High voltage diode

Methods for producing bipolar transistors with improved stability

Methods of fabricating diodes with multiple junctions

Semiconductor device with improved breakdown voltage

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE ISOLATION WITH RESURF LAYER ARRANGEMENT

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

PARTIAL, SELF-BIASED ISOLATION IN SEMICONDUCTOR DEVICES

SELF-ADJUSTED ISOLATION BIAS IN SEMICONDUCTOR DEVICES

DIODES WITH MULTIPLE JUNCTIONS

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICES

PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE

MULTI-GATE SEMICONDUCTOR DEVICES WITH IMPROVED HOT-CARRIER INJECTIO...

SEMICONDUCTOR DEVICE WITH ENHANCED 3D RESURF

Composite Semiconductor Device with Different Channel Widths

SEMICONDUCTOR DEVICES AND RELATED FABRICATION METHODS

HIGH BREAKDOWN VOLTAGE LDMOS DEVICE

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

RELIABILITY IN MERGEABLE SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH COMPOSITE DRIFT REGION AND RELATED FABRIC...

Methods of Fabricating Diodes with Multiple Junctions

Composite Semiconductor Device with Multiple Threshold Voltages

Semiconductor Device with Peripheral Breakdown Protection

High Voltage Diode

Resurf High Voltage Diode

Diodes with Multiple Junctions and Fabrication Methods Therefor

Mergeable Semiconductor Device with Improved Reliability

DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS

DRAIN-END DRIFT DIMINUTION IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH NOTCHED GATE

SEMICONDUCTOR DEVICE AND RELATED FABRICATION METHODS

NONVOLATILE MEMORY BITCELL

DIE EDGE SEALING STRUCTURES AND RELATED FABRICATION METHODS

METHODS FOR PRODUCING NEAR ZERO CHANNEL LENGTH FIELD DRIFT LDMOS